Carbon nanostructures grown on 3D silicon carbide foams: Role of intermediate silica layer and metal growth

2014 ◽  
Vol 258 ◽  
pp. 110-118 ◽  
Author(s):  
Saheed A. Ganiyu ◽  
Oki Muraza ◽  
Abbas S. Hakeem ◽  
Khalid Alhooshani ◽  
Muataz A. Atieh
Keyword(s):  
Silicon Carbide ◽  
Carbon Nanostructures ◽  
Silica Layer

scholarly journals Наноструктуры AlN и GaN: аналитические оценки характеристик электронного спектра

2020 ◽  
Vol 62 (6) ◽  
pp. 955
Author(s):  
С.Ю. Давыдов
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Carbon Nanostructures ◽  
Numerical Results ◽  
Effective Masses ◽  
Linear Chains ◽  
Analytical Expressions ◽  
Zigzag Type

For AlN and GaN infinite flat sheets, free and decorated nanoribbons with the zigzag-type edges and linear chains the analytical expressions for the band-gap widths, characteristic velocities and effective masses are obtained. Numerical results are compared with the values of the corresponding characteristics calculated within the same models for the silicon carbide and carbon nanostructures. The role of substrate is also briefly discussed.

Role of Electronic Excitations in Ion Collisions with Carbon Nanostructures

2007 ◽  
Vol 99 (1) ◽  
Author(s):  
Arkady V. Krasheninnikov ◽  
Yoshiyuki Miyamoto ◽  
David Tománek
Keyword(s):  
Carbon Nanostructures ◽  
Electronic Excitations ◽  
Ion Collisions

Synthesis of Silicon Carbide Films from Partially Oxidized Polyvinylsilane by Carbon Tetrachloride Solution Casting

2002 ◽  
Vol 17 (1) ◽  
pp. 214-223 ◽  
Author(s):  
Masaki Narisawa ◽  
Takeshi Hasegawa ◽  
Kiyohito Okamura ◽  
Masayoshi Itoh ◽  
Thomas Apple ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carbon Tetrachloride ◽  
Radical Polymerization ◽  
Air Flow ◽  
Spectroscopic Studies ◽  
Flow Time ◽  
Silica Layer ◽  
Solution Casting ◽  
Amorphous Films ◽  
Carbon Tetrachloride Solution

Polyvinylsilane (PVS), derived from vinylsilane by radical polymerization, was partially oxidized in hot carbon tetrachloride solution by flowing air. If the air flow time is adjusted, soft gel films can be formed in a Teflon dish by casting the PVS solution. After the PVS films were peeled from the substrates, they were pyrolyzed at various temperatures. Spectroscopic studies of the pyrolyzed films up to 1273 K suggested that carbosilane (Si–CH2–Si) structures are formed in the films at 473–673 K. The compositions of the amorphous films obtained at 1673 K were approximately SiC1.38O0.21 and SiC1.41O0.51, depending on the crosslinking conditions. The oxygen incorporated in the films was removed in the form of CO and SiO during further heating at 1673–1873 K. The compositions of the films were changed to approximately SiC1.25 and SiC1.26, respectively, at 2073 K. The films obtained at 1273 K did not show degradation during the oxidation at 1273–1673 K while a protective silica layer was formed on their surfaces.

Role of silicon carbide/mercury interface in ignitrons

1970 ◽  
Vol 3 (8) ◽  
pp. 1284-1289 ◽  
Author(s):  
M J Zarabi ◽  
M Satyam
Keyword(s):  
Silicon Carbide

Al+and N+implantation in silicon carbide: a role of point defect clusters in defect evolution

2001 ◽  
Author(s):  
Peter V. Rybin ◽  
Dmitri V. Kulikov ◽  
Yuri V. Trushin ◽  
J. Petzoldt
Keyword(s):  
Silicon Carbide ◽  
Point Defect ◽  
Defect Clusters ◽  
Defect Evolution ◽  
Point Defect Clusters

In-situ generation of graphene network in silicon carbide fibers: Role of iodine and carbon monoxide

Carbon ◽  
2020 ◽  
Vol 158 ◽  
pp. 110-120
Author(s):  
Junsung Hong ◽  
Youngjin Ko ◽  
Kwang-Yeon Cho ◽  
Dong-Geun Shin ◽  
Prabhakar Singh ◽  
...  
Keyword(s):  
Carbon Monoxide ◽  
Silicon Carbide ◽  
Silicon Carbide Fibers ◽  
In Situ Generation

Evaluation of the Role of Au in Improving Catalytic Activity of Ni Nanoparticles for the Formation of One-Dimensional Carbon Nanostructures

Nano Letters ◽  
2011 ◽  
Vol 11 (6) ◽  
pp. 2464-2471 ◽  
Author(s):  
Renu Sharma ◽  
See-Wee Chee ◽  
Andrew Herzing ◽  
Ryan Miranda ◽  
Peter Rez
Keyword(s):  
Catalytic Activity ◽  
Carbon Nanostructures ◽  
Ni Nanoparticles ◽  
One Dimensional
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