Ultrafine nickel–copper carbonate hydroxide hierarchical nanowire networks for high-performance supercapacitor electrodes

2016 ◽  
Vol 290 ◽  
pp. 353-360 ◽  
Author(s):  
Xiaoting Zheng ◽  
Yunlong Ye ◽  
Qian Yang ◽  
Baoyou Geng ◽  
Xiaojun Zhang
2019 ◽  
Vol 780 ◽  
pp. 147-155 ◽  
Author(s):  
P.W. Yuan ◽  
S.H. Guo ◽  
S.Q. Gao ◽  
J. Wang ◽  
W.Q. Chen ◽  
...  

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.


2022 ◽  
Vol 571 ◽  
pp. 151081
Author(s):  
Yu Luo ◽  
Tianze Ning ◽  
Yuechen Pei ◽  
Xueming Feng ◽  
Shuyuan Zhang ◽  
...  

2018 ◽  
Vol 273 ◽  
pp. 170-180 ◽  
Author(s):  
Dongwei Du ◽  
Rong Lan ◽  
John Humphreys ◽  
Houari Amari ◽  
Shanwen Tao

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