Effect of oxygen/argon gas ratio on the structure and optical properties of sputter-deposited nanocrystalline HfO2 thin films

2015 ◽  
Vol 41 (5) ◽  
pp. 6187-6193 ◽  
Author(s):  
C.V. Ramana ◽  
M. Vargas ◽  
G.A. Lopez ◽  
M. Noor-A-Alam ◽  
M.J. Hernandez ◽  
...  
2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Senthuran Karthick Kumar ◽  
Sepperumal Murugesan ◽  
Santhanakrishnan Suresh ◽  
Samuel Paul Raj

Nanostructured cupric oxide (CuO) thin films have been deposited on copper (Cu) substrates at different substrate temperatures and oxygen to argon gas ratios through direct current (DC) reactive magnetron sputtering. The deposited CuO thin films are characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), profilometry, and spectrophotometry techniques. The crystalline phases, morphology, optical properties, and photothermal conversion efficiency of the CuO thin films are found to be significantly influenced by the change in substrate temperature and oxygen to argon gas ratio. The variations in the substrate temperature and oxygen to argon gas ratio have induced changes in Cu+ and Cu2+ concentrations of the CuO thin films that result in corresponding changes in their optical properties. The CuO thin film prepared at a substrate temperature of 30°C and O2 to Ar gas ratio of 1 : 1 has exhibited high absorptance and low emittance; thus, it could be used as a solar selective absorber in solar thermal gadgets.


2000 ◽  
Vol 648 ◽  
Author(s):  
F. Niu ◽  
P.J. Dobson ◽  
B. Cantor

AbstractNovel Si-Al nanocomposite thin films were made by radio frequency co-sputtering of Si and Al with Al content from 0 at.% to 69 at.%. Microstructure and optical properties of the films were characterised by conventional and high resolution transmission electron microscopyand spectrometry in the wavelength range from 200 to 3000 nm. The film microstructure consisted of Al nanoparticles (2-9 nm) embedded in an amorphous Si-Al matrix. Optical absorption spectra of the films up to 50 at.% Al exhibited a sharp absorption peak below500 nm and relatively low absorption above 500 nm. In addition, the absorption peak shifted towards longer wavelengths and the general absorption above 500 nm increased remarkably as Al content increased. For the Si-69at.%Al films, however, an absorption plateau appeared between 300 nm to 700 nm and a second weak and broad absorption peak appeared at around 900 nm. The results are analysed and compared with the optical absorption predicted by various effective medium theories.


1997 ◽  
Vol 71 (16) ◽  
pp. 2382-2384 ◽  
Author(s):  
J. A. Caballero ◽  
W. J. Geerts ◽  
J. R. Childress ◽  
F. Petroff ◽  
P. Galtier ◽  
...  

2017 ◽  
Vol 19 (23) ◽  
pp. 15084-15097 ◽  
Author(s):  
Sundar Kunwar ◽  
Mao Sui ◽  
Puran Pandey ◽  
Quanzhen Zhang ◽  
Ming-Yu Li ◽  
...  

Semi-spherical and irregular Pd nanoparticles and voids are fabricated on sapphire(0001) by the solid-state dewetting of sputter-deposited Pd thin films at different thickness and temperature. The structural evolution, surface morphology transformation and optical properties of Pd nanostructures are probed.


2017 ◽  
Vol 56 (22) ◽  
pp. 6114 ◽  
Author(s):  
S. Maidul Haque ◽  
Rajnarayan De ◽  
S. Tripathi ◽  
C. Mukherjee ◽  
A. K. Yadav ◽  
...  

2016 ◽  
Vol 619 ◽  
pp. 86-90 ◽  
Author(s):  
Firdous A. Tantray ◽  
Arpana Agrawal ◽  
Mukul Gupta ◽  
Joseph T. Andrews ◽  
Pratima Sen

RSC Advances ◽  
2015 ◽  
Vol 5 (45) ◽  
pp. 36129-36139 ◽  
Author(s):  
J. K. Dash ◽  
L. Chen ◽  
Michael R. Topka ◽  
Peter H. Dinolfo ◽  
L. H. Zhang ◽  
...  

Synthesis of Nb2O5 thin films from sputter deposited Nb films and its optical property.


2014 ◽  
Vol 904 ◽  
pp. 205-208
Author(s):  
J.H. Gu ◽  
Z.Y. Zhong ◽  
S.B. Chen ◽  
C.Y. Yang ◽  
J. Hou

Zinc oxide (ZnO) thin films were deposited by radio frequency (RF) magnetron sputtering technique on glass substrates in pure argon gas. The optical transmission stectra of the films were measured by ultraviolet-visible spectrophotometer. The effects of argon gas pressure on optical properties of the deposited films were investigated. The optical band-gap of the films was evaluated in terms of the Taucs law. The results show that the argon gas pressure has slightly affected the optical band-gap of the deposited films. Furthermore, the refractive index and extinction coefficient of the films were determined by means of the optical characterization methods. Meanwhile, the dispersion behavior of the refractive index was studied by the single-oscillator model of Wemple and DiDomenico, and the physical parameters of the average oscillator strength, average oscillator wavelength, oscillator energy, the refractive index dispersion parameter and the dispersion energy were obtained.


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