A comparative study of structural, optical and electrical properties of ZnS thin films obtained by thermal evaporation and SILAR techniques

2017 ◽  
Vol 43 (13) ◽  
pp. 10487-10493 ◽  
Author(s):  
K. Priya ◽  
V.K. Ashith ◽  
Gowrish K. Rao ◽  
Ganesh Sanjeev
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Comparative Study ◽  
Thermal Evaporation ◽  
Optical And Electrical Properties

Comparative Study on Structural, Optical, and Electrical Properties of ZnO Thin Films Prepared by PLD and Sputtering Techniques

2020 ◽  
Vol 54 (9) ◽  
pp. 999-1010
Author(s):  
H. Naeem-ur-Rehman Khan ◽  
M. Mehmood ◽  
F. C. C. Ling ◽  
A. Faheem Khan ◽  
S. M. Ali
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Comparative Study ◽  
Zno Thin Films ◽  
Optical And Electrical Properties

scholarly journals Optical and Electrical Properties of Ag-Doped In2S3Thin Films Prepared by Thermal Evaporation

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
Peijie Lin ◽  
Sile Lin ◽  
Shuying Cheng ◽  
Jing Ma ◽  
Yunfeng Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Hall Measurement System

Ag-doped In2S3(In2S3:Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2S3and AgIn5S8phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from ~103to5.478×10-2 Ω·cm.

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