Optical and Electrical Properties of Ag-Doped In2S3Thin Films Prepared by Thermal Evaporation
2014 ◽
Vol 2014
◽
pp. 1-4
◽
Keyword(s):
X Ray
◽
Ag-doped In2S3(In2S3:Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2S3and AgIn5S8phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from ~103to5.478×10-2 Ω·cm.
2013 ◽
Vol 20
(06)
◽
pp. 1350058
◽
2019 ◽
2010 ◽
Vol 45
(1)
◽
pp. 53-58
◽
2013 ◽
Vol 678
◽
pp. 123-130
◽
2011 ◽
Vol 509
(20)
◽
pp. 6004-6008
◽