Fracture behavior of diamond films deposited by DC arc plasma jet CVD

2018 ◽  
Vol 44 (11) ◽  
pp. 13402-13408 ◽  
Author(s):  
Kang An ◽  
Liangxian Chen ◽  
Xiongbo Yan ◽  
Xin Jia ◽  
Yun Zhao ◽  
...  
1998 ◽  
Vol 7 (6) ◽  
pp. 733-736 ◽  
Author(s):  
F.X. Lu ◽  
Y.L. Fu ◽  
G.F. Zhong ◽  
Z. Jiang ◽  
W.Z. Tang ◽  
...  

2004 ◽  
Vol 13 (1) ◽  
pp. 139-144 ◽  
Author(s):  
J.X Yang ◽  
H.D Zhang ◽  
C.M Li ◽  
G.C Chen ◽  
F.X Lu ◽  
...  

2005 ◽  
Vol 475-479 ◽  
pp. 3615-3618
Author(s):  
Hui Qing Li ◽  
Cheng Ming Li ◽  
Guang Chao Chen ◽  
Fan Xiu Lu ◽  
Yu Mei Tong

Interfaces between Mo substrate and free-standing diamond films prepared by DC arc plasma jet operated at gas recycling mode were investigated, including for the first time used and multi-time used substrate. The morphology, phase composition and bonding state of elements in the interface between substrates and diamond films were examined by optical microscopy, XRD and XPS. The profiles of carbon concentration of Mo substrates were measured by GDOES. It showed that Mo2C and MoC were formed on the first time used Mo substrate, and MoC was found on diamond films nucleation side after detachment. It suggested that MoC was peeled off from Mo substrate. The stable Mo2C on Mo substrate was formed after multi-time use of Mo substrate. However, MoC has not been found on it. The thickness of carburizing layer on the first time used Mo substrate is up to 30µm, and the carburizing layer on the multi-time used substrate is much thicker than that on the first used. The amorphous carbon in the surface of the substrate and nucleation side of diamond films was found by XPS, including for the first time used and multi-time used substrate.


2009 ◽  
Vol 18 (11) ◽  
pp. 1348-1352 ◽  
Author(s):  
Chengming Li ◽  
Limei Wang ◽  
Liangxian Chen ◽  
Zheng Liu ◽  
Lifu Hei ◽  
...  

2006 ◽  
Vol 15 (5) ◽  
pp. 980-984 ◽  
Author(s):  
Zhou Zu-Yuan ◽  
Chen Guang-Chao ◽  
Tang Wei-Zhong ◽  
Lü Fan-Xiu

2007 ◽  
Vol 309 (1) ◽  
pp. 86-92 ◽  
Author(s):  
G.C. Chen ◽  
H. Lan ◽  
B. Li ◽  
F.W. Dai ◽  
S.J. Askari ◽  
...  

2011 ◽  
Vol 175 ◽  
pp. 245-248
Author(s):  
Rong Fa Chen ◽  
Liang Gang Dai ◽  
Rui Zhu ◽  
Xian Liang Zhang ◽  
Tao Liu ◽  
...  

. High quality diamond film wafers with different thickness are prepared by high power DC arc plasma jet CVD (DCPJ CVD) method using a CH4/Ar/H2 gas mixture. The effect of substrate temperature on the quality of diamond film was studied with theoretical analysis and experimental investigation. The results indicate that different structures in diamond film may grow with different substrate temperatures. The temperatures of 800°C, 900°C and 1000°C were tested in the experiments. The quality of diamond film showed the best at the temperature of 900°C. Characterization by X-ray diffraction, Raman spectroscopy and SEM analysis are also carried out.


2000 ◽  
Vol 9 (9-10) ◽  
pp. 1682-1686 ◽  
Author(s):  
W.X Pan ◽  
F.X Lu ◽  
W.Z Tang ◽  
G.F Zhong ◽  
Z Jiang ◽  
...  

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