Quality enhancement of copper oxide thin film synthesized under elevated gravity acceleration by two-axis spin coating

2020 ◽  
Vol 46 (6) ◽  
pp. 7421-7429 ◽  
Author(s):  
Soroosh Mahmoodi ◽  
Dhia A. Hassan ◽  
Akbar Hojjati-Najafabadi ◽  
Wei Li ◽  
Liefa Liao ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Spin Coating ◽  
Oxide Thin Film ◽  
Quality Enhancement ◽  
Gravity Acceleration ◽  
Copper Oxide Thin Film

Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication

2015 ◽  
Vol 73 (1) ◽  
Author(s):  
Jia Wei Low ◽  
Nafarizal Nayan ◽  
Mohd Zainizan Sahdan ◽  
Mohd Khairul Ahmad ◽  
Ali Yeon Md Shakaff ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Flow Rate ◽  
Langmuir Probe ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Oxide Thin Film ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Copper Oxide Thin Film

Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm. The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to -60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate.

Facile preparation of reduced graphene oxide wrapped copper oxide thin film solar selective absorbers

2020 ◽  
Vol 46 (17) ◽  
pp. 27897-27902 ◽  
Author(s):  
N. Murugesan ◽  
S. Suresh ◽  
M. Kandasamy ◽  
S. Murugesan ◽  
S. Karthick Kumar
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Copper Oxide ◽  
Reduced Graphene Oxide ◽  
Oxide Thin Film ◽  
Reduced Graphene ◽  
Facile Preparation ◽  
Copper Oxide Thin Film

Effect of annealing treatment on sputtered copper oxide thin film

2018 ◽  
Vol 5 (7) ◽  
pp. 15170-15173
Author(s):  
N. Sangwaranatee ◽  
M. Horprathum ◽  
C. Chananonnawathorn ◽  
Hendro
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Annealing Treatment ◽  
Oxide Thin Film ◽  
Copper Oxide Thin Film

Nanostructured Copper Oxide Thin Film for Ethanol Vapor Sensing

2012 ◽  
Vol 12 (16) ◽  
pp. 1656-1660 ◽  
Author(s):  
Varadharaja Perumal Sr ◽  
Durgajanani Sivalingam ◽  
Jeyaprakash Beri Gopal ◽  
John Bosco Bala
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Ethanol Vapor ◽  
Oxide Thin Film ◽  
Vapor Sensing ◽  
Copper Oxide Thin Film ◽  
Nanostructured Copper
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