Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication

2015 ◽  
Vol 73 (1) ◽  
Author(s):  
Jia Wei Low ◽  
Nafarizal Nayan ◽  
Mohd Zainizan Sahdan ◽  
Mohd Khairul Ahmad ◽  
Ali Yeon Md Shakaff ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Flow Rate ◽  
Langmuir Probe ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Oxide Thin Film ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Copper Oxide Thin Film

Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm. The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to -60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate.

scholarly journals Influence of Oxygen Flow Rate on Sputter Deposition Rate and SEM Image of Copper Oxide Thin Films

2015 ◽  
Vol 773-774 ◽  
pp. 711-715
Author(s):  
Nayan Nafarizal ◽  
Jia Wei Low ◽  
Mohd Zainizan Sahdan ◽  
Mohd Khairul Ahmad ◽  
Ali Yeon Md Shakaff ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Deposition Rate ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Oxide Thin Film ◽  
Substrate Bias ◽  
Sem Image ◽  
Copper Oxide Thin Film

Recently, copper oxide thin film has been studied because of its low cost, sensitivity to ambient condition and easiness to produce oxide thin film. It is one of the p-type semiconductor oxides materials that are suitable to be used as gas sensing material. In order to improve the sensitivity and to optimize the properties of copper oxide thin film, it is essential to study the physical structure of copper oxide. In current studies, copper oxide thin film has been deposited by RF magnetron sputtering at different substrate bias voltages and oxygen flow rates. The results reveal that the deposition rate decreased when the oxygen flow rate above 4 sccm. SEM image reveal that nanostructure copper oxide was also obtained when the oxygen flow rate was above 4 sccm. On the other hand, no significant effect on the substrate bias voltage toward the sputter deposition rate was observed.

Effect of Substrate Bias in Copper Sputtering Plasma Measured by Langmuir Probe

2014 ◽  
Vol 925 ◽  
pp. 238-242 ◽  
Author(s):  
Jia Wei Low ◽  
Nayan Nafarizal ◽  
Mohd Zainizan Sahdan ◽  
Mahamad Abd Kadir ◽  
Mohd Khairul bin Ahmad ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Electron Temperature ◽  
Langmuir Probe ◽  
Ion Flux ◽  
Oxygen Flow ◽  
Oxide Thin Film ◽  
Substrate Bias ◽  
Sputtering Deposition ◽  
Copper Oxide Thin Film

There are several techniques to deposit the metal oxide thin film such as electron beam evaporator, pulse laser deposition and reactive magnetron sputtering deposition. In this experiment, magnetron sputtering deposition techniques will be used to produce a copper oxide thin film due to its simplicity and repeatability performance. Recently, copper oxide thin film has been studied because of its low cost material, sensitivity to ambient condition and easiness to produce oxide thin film. It is one of the p-type semiconductor oxides materials that are suitable to be used as a gas sensing material. In order to increase the sensitivity and to optimize the properties of copper oxide thin film, it is essential to study on the plasma properties during the deposition of copper oxide. In current studies, Langmuir probe was used to investigate the effect of substrate bias towards the fabrication of copper oxide thin film at rf dissipation power of 400 W. The oxygen flow rate was fixed at 8sccm. The Langmuir probe tip was focus at roughly 2 cm above the substrate holder. The ion and electron current were collected from the plasma environment. Then the electron temperature, electron density, ion density, ion flux, Debye length and plasma potential at various substrate biases were evaluated from the current-voltage curve. The electron temperature at various oxygen flow rates was almost unchanged. The effect of substrate bias toward the electron temperature was also almost unseen, except that the electron temperature at-40 V bias voltage was slightly lower than others. In addition, the ion flux at the same plasma condition shows that the ion flux was higher at-40 V substrate bias voltage. The results suggest that the ion bombardment effect toward the deposited copper oxide thin film would be higher at low oxygen flow rate. Thus it will create a rough surface morphology or nanostructured copper oxide thin film. This is a potential ways to improve the sensitivity of copper oxide gas sensor.

Facile preparation of reduced graphene oxide wrapped copper oxide thin film solar selective absorbers

2020 ◽  
Vol 46 (17) ◽  
pp. 27897-27902 ◽  
Author(s):  
N. Murugesan ◽  
S. Suresh ◽  
M. Kandasamy ◽  
S. Murugesan ◽  
S. Karthick Kumar
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Copper Oxide ◽  
Reduced Graphene Oxide ◽  
Oxide Thin Film ◽  
Reduced Graphene ◽  
Facile Preparation ◽  
Copper Oxide Thin Film

Effect of annealing treatment on sputtered copper oxide thin film

2018 ◽  
Vol 5 (7) ◽  
pp. 15170-15173
Author(s):  
N. Sangwaranatee ◽  
M. Horprathum ◽  
C. Chananonnawathorn ◽  
Hendro
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Annealing Treatment ◽  
Oxide Thin Film ◽  
Copper Oxide Thin Film

Gas-Sensing Property Evaluation of Reactively Sputtered Chromium Oxide Thin Films

2008 ◽  
Vol 55-57 ◽  
pp. 285-288 ◽  
Author(s):  
C. Oros ◽  
Anurat Wisitsoraat ◽  
Pichet Limsuwan ◽  
M. Horpathum ◽  
V. Patthanasettakul ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Chromium Oxide ◽  
Flow Rate ◽  
Gas Sensing ◽  
Oxygen Flow Rate ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Sensing Applications

Metal oxide thin film materials, including SnO2, TiO2, WO3, MoO3, ZnO, have been widely studied for gas sensing applications. However, new gas-sensing materials with distinct and diverse characteristics for new sensing applications such as electronic nose are still being explored. Presently, gas sensing properties of other metal oxides have not yet been extensively explored. Chromium oxide is an interesting metal oxide for gas sensor because of its temperature stability and moderate electrical conductivity. Nevertheless, there have been very few studies on gas sensing behaviors of this material. In this work, chromium oxide thin films were systematically studied by reactive sputtering with varying sputtering parameter including oxygen flow rate. Structural characterization by means of scanning electron microscopy and X-ray diffraction reveals that the films have sub-micometer grain-size with Rhombohedral phase of Cr2O3. Gas-sensing performances of sputtered chromium oxide thin film have been characterized toward ethanol and acetylene sensing. It was found that chromium oxide thin films exhibit p-type conductivity with increased resistance when exposed to ethanol and acetylene, which are reducing gases. In addition, sensitivity to both acetylene and ethanol tend to improve as oxygen flow rate increases. Furthermore, the chromium oxide thin films exhibit high sensitivity at moderate temperature of 250-300 °C with minimum operating temperature of 200 °C.

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