P‐18: Improving Switching Characteristics of p‐type Copper Oxide Thin‐film Transistors by Germanium Oxide Passivation through Reactive Sputtering

2019 ◽  
Vol 50 (1) ◽  
pp. 1279-1282
Author(s):  
Won Kyung Min ◽  
Sung Pyo Park ◽  
Tae Soo Jung ◽  
Hee Jun Kim ◽  
Jin Hyeok Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Thin Film Transistors ◽  
Reactive Sputtering ◽  
Oxide Thin Film ◽  
Germanium Oxide ◽  
Switching Characteristics ◽  
P Type ◽  
Copper Oxide Thin Film

Switching Enhancement via a Back-Channel Phase-Controlling Layer for p-Type Copper Oxide Thin-Film Transistors

2020 ◽  
Vol 12 (22) ◽  
pp. 24929-24939 ◽  
Author(s):  
Won Kyung Min ◽  
Sung Pyo Park ◽  
Hee Jun Kim ◽  
Jin Hyeok Lee ◽  
Kyungho Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
P Type ◽  
Copper Oxide Thin Film

Solution-processed p-type copper oxide thin-film transistors fabricated by using a one-step vacuum annealing technique

2015 ◽  
Vol 3 (37) ◽  
pp. 9509-9513 ◽  
Author(s):  
Jianmin Yu ◽  
Guoxia Liu ◽  
Ao Liu ◽  
You Meng ◽  
Byoungchul Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Vacuum Annealing ◽  
Solution Process ◽  
Oxide Thin Film ◽  
One Step ◽  
P Type ◽  
Copper Oxide Thin Film

High-performance p-type CuxO TFTs were fabricated by a solution process and annealed at various temperatures under vacuum.

scholarly journals The Potassium‐Assisted P‐Type Characteristics of Tin Oxide in Solution‐Processed High‐Performance Metal Oxide Thin‐Film Transistors

2021 ◽  
Vol 218 (18) ◽  
pp. 2170052
Author(s):  
Sooji Nam ◽  
Su-Jae Lee ◽  
Jae-Eun Pi ◽  
Jong-Heon Yang ◽  
Chi-Sun Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
P Type

Gallium Doping Effects for Improving Switching Performance of p-Type Copper(I) Oxide Thin-Film Transistors

2020 ◽  
Vol 12 (34) ◽  
pp. 38350-38356
Author(s):  
Jun Hyeon Bae ◽  
Jin Hyeok Lee ◽  
Sung Pyo Park ◽  
Tae Soo Jung ◽  
Hee Jun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Switching Performance ◽  
Doping Effects ◽  
Gallium Doping ◽  
P Type

Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication

2015 ◽  
Vol 73 (1) ◽  
Author(s):  
Jia Wei Low ◽  
Nafarizal Nayan ◽  
Mohd Zainizan Sahdan ◽  
Mohd Khairul Ahmad ◽  
Ali Yeon Md Shakaff ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Flow Rate ◽  
Langmuir Probe ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Oxide Thin Film ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Copper Oxide Thin Film

Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm. The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to -60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate.

Facile preparation of reduced graphene oxide wrapped copper oxide thin film solar selective absorbers

2020 ◽  
Vol 46 (17) ◽  
pp. 27897-27902 ◽  
Author(s):  
N. Murugesan ◽  
S. Suresh ◽  
M. Kandasamy ◽  
S. Murugesan ◽  
S. Karthick Kumar
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Copper Oxide ◽  
Reduced Graphene Oxide ◽  
Oxide Thin Film ◽  
Reduced Graphene ◽  
Facile Preparation ◽  
Copper Oxide Thin Film

p-Type transparent amorphous oxide thin-film transistors using low-temperature solution-processed nickel oxide

2019 ◽  
Vol 806 ◽  
pp. 40-51 ◽  
Author(s):  
Wangying Xu ◽  
Junpeng Zhang ◽  
Yujia Li ◽  
Lingjiao Zhang ◽  
Lin Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Nickel Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Amorphous Oxide ◽  
Temperature Solution ◽  
P Type
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