Effect of Ho3+ ions on microwave losses and high-temperature electrical behavior of Li-based magnetic oxides

2020 ◽  
Author(s):  
Alina Manzoor ◽  
Muhammad Azhar Khan ◽  
Thamraa Alshahrani ◽  
M.H. Alhossainy ◽  
M. Sharif ◽  
...  
Keyword(s):  
High Temperature ◽  
Magnetic Oxides ◽  
Electrical Behavior ◽  
Microwave Losses

Electrical behavior of Au–Ge eutectic solder under aging for solder bump application in high temperature Electronics

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1581-1586 ◽  
Author(s):  
F.L. Lau ◽  
Riko. I Made ◽  
W.N. Putra ◽  
J.Z. Lim ◽  
V.C. Nachiappan ◽  
...  
Keyword(s):  
High Temperature ◽  
Solder Bump ◽  
Electrical Behavior ◽  
Eutectic Solder ◽  
High Temperature Electronics

Role of the Substrate Doping in the Activation of Fe2+ centers in Fe implanted InP

2005 ◽  
Vol 864 ◽  
Author(s):  
T. Cesca ◽  
A. Gasparotto ◽  
G. Mattei ◽  
A. Verna ◽  
B. Fraboni ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Activation ◽  
Electrical Behavior ◽  
Doping Density ◽  
Annealing Behavior ◽  
Deep Traps ◽  
Postimplantation Annealing ◽  
N Doping ◽  
Substrate Doping

AbstractWe have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The lattice location of the Fe atoms and the effect of postimplantation annealing treatments have been studied by PIXE-channeling measurements. I-V, CV and DLTS analyses have been used to characterize the electrical properties related to the presence Fe2+/3+ deep traps. The results show that the background n-doping density play a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers. The same effect has been observed in samples containing Fe concentrations both above and below the Fe solubility threshold in InP.

Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices

2007 ◽  
Vol 556-557 ◽  
pp. 671-674 ◽  
Author(s):  
Sombel Diaham ◽  
Marie Laure Locatelli ◽  
Thierry Lebey
Keyword(s):  
Silicon Carbide ◽  
Dielectric Constant ◽  
High Temperature ◽  
Dielectric Loss ◽  
Loss Factor ◽  
Electrical Behavior ◽  
Power Devices ◽  
Polyimide Films ◽  
Temperature Operating ◽  
Conduction Properties

Characterizations of Al/Polyimide/Al capacitors in a temperature range extended up to 400°C are presented. The aim is to determine the retained BPDA/PPD polyimide (PI) intrinsic dielectric and conduction properties, as a first stage in the evaluation of its ability to be applied as a passivation material for high temperature operating silicon carbide power devices. The dielectric constant, dielectric loss factor, and the static leakage current of the “as-prepared” Al/PI/Al structures are strongly affected above 175°C, reaching critical values at 400°C with regard to the aimed application. However, an evolution of these characteristics after the sample exposure at high temperature is observed, resulting in a very good and stabilized electrical behavior even at 400°C.

High-temperature electrical behavior of a 2D multilayered MoS2 transistor

2014 ◽  
Vol 64 (7) ◽  
pp. 945-948 ◽  
Author(s):  
Yeonsung Lee ◽  
Heekyeong Park ◽  
Junyeon Kwon ◽  
Omkaram Inturu ◽  
Sunkook Kim
Keyword(s):  
High Temperature ◽  
Electrical Behavior

Two Packaging Solutions for High Temperature SiC Diode Sensors

2014 ◽  
Vol 778-780 ◽  
pp. 1063-1066 ◽  
Author(s):  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Marian Badila ◽  
Florea Craciunoiu ◽  
Gheorghe Pristavu ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Contact Pressure ◽  
Gold Wire ◽  
Temperature Sensors ◽  
Schottky Barrier Diodes ◽  
Electrical Behavior ◽  
Sensor Performance

A partially electrically isolated package with a gold wire and fully isolated solution with a metallic piston, respectively, are designed and tested for high temperature sensors (400°C) based on SiC Schottky barrier diodes (SBD). Electrical behavior and sensor performance are very close for both packaging solutions. The stress due to contact pressure and higher cost are some disadvantages for pressure contact technology.

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