Role of the Substrate Doping in the Activation of Fe2+ centers in Fe implanted InP

2005 ◽  
Vol 864 ◽  
Author(s):  
T. Cesca ◽  
A. Gasparotto ◽  
G. Mattei ◽  
A. Verna ◽  
B. Fraboni ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Activation ◽  
Electrical Behavior ◽  
Doping Density ◽  
Annealing Behavior ◽  
Deep Traps ◽  
Postimplantation Annealing ◽  
N Doping ◽  
Substrate Doping

AbstractWe have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The lattice location of the Fe atoms and the effect of postimplantation annealing treatments have been studied by PIXE-channeling measurements. I-V, CV and DLTS analyses have been used to characterize the electrical properties related to the presence Fe2+/3+ deep traps. The results show that the background n-doping density play a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers. The same effect has been observed in samples containing Fe concentrations both above and below the Fe solubility threshold in InP.

scholarly journals The Role of Chromium in Iron-based High-Temperature Water-Gas Shift Catalysts under Industrial Conditions

2021 ◽  
pp. 120465
Author(s):  
M.I. Ariëns ◽  
V. Chlan ◽  
P. Novák ◽  
L.G.A. van de Water ◽  
A.I. Dugulan ◽  
...  
Keyword(s):  
High Temperature ◽  
Water Gas Shift ◽  
High Temperature Water ◽  
Iron Based ◽  
Water Gas ◽  
Temperature Water

Microstructure of high-temperature (>73 °C) siliceous sinter deposited around hot springs and geysers, Yellowstone National Park: the role of biological and abiological processes in sedimentation

2003 ◽  
Vol 40 (11) ◽  
pp. 1611-1642 ◽  
Author(s):  
Donald R Lowe ◽  
Deena Braunstein
Keyword(s):  
High Temperature ◽  
Yellowstone National Park ◽  
National Park ◽  
Hot Springs ◽  
Strain Effect ◽  
Temperature Sinter ◽  
Architectural Features ◽  
Siliceous Sinter ◽  
High Temperature Sinter

Slightly alkaline hot springs and geysers in Yellowstone National Park exhibit distinctive assemblages of high-temperature (>73 °C) siliceous sinter reflecting local hydrodynamic conditions. The main depositional zones include subaqueous pool and channel bottoms and intermittently wetted subaerial splash, surge, and overflow areas. Subaqueous deposits include particulate siliceous sediment and dendritic and microbial silica framework. Silica framework forms thin, porous, microbe-rich films coating subaqueous surfaces. Spicules with intervening narrow crevices dominate in splash zones. Surge and overflow deposits include pool and channel rims, columns, and knobs. In thin section, subaerial sinter is composed of (i) dark brown, nearly opaque laminated sinter deposited on surfaces that evaporate to dryness; (ii) clear translucent silica deposited subaqueously through precipitation driven by supersaturation; (iii) heterogeneous silica representing silica-encrusted microbial filaments and detritus; and (iv) sinter debris. Brownish laminations form the framework of most sinter deposited in surge and overflow zones. Pits and cavities are common architectural features of subaerial sinter and show concave-upward pseudo-cross-laminations and micro-unconformities developed through migration. Marked birefringence of silica deposited on surfaces that evaporate to dryness is probably a strain effect. Repeated wetting and evaporation, often to dryness, and capillary effects control the deposition, morphology, and microstructure of most high-temperature sinter outside of the fully subaqueous zone. Microbial filaments are abundant on and within high-temperature sinter but do not provide the main controls on morphology or structuring except in biofilms developed on subaqueous surfaces. Millimetre-scale lamination cyclicity in much high-temperature sinter represents annual layering and regular seasonal fluctuations in silica sedimentation.

A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18 μm Cmos Devices

1998 ◽  
Vol 525 ◽  
Author(s):  
L. P. Ren ◽  
P. Liu ◽  
G. Z. Pan ◽  
Jason C. S. Woo
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Amorphous Layer ◽  
Sharp Interface ◽  
Silicide Formation ◽  
Si Substrate ◽  
Metal Thickness ◽  
Substrate Doping

ABSTRACTA novel low temperature self-aligned Ti silicidation with Ge+ pre-amorphization implant (PAI) is presented. Compared to conventional high temperature PAM silicidation, the advantages of Ti salicidation at temperatures below the recrystallization of a pre-amorphized layer are: (1) C49 TiSi2 silicide formation occurs only in the pre-amorphized layer so that the silicide depth can be well controlled, forming a very sharp interface between the silicide and the Si substrate; (2) Ti just reacts with the amorphous layer, avoiding the so-called bridging issue in which the silicide grows laterally over the isolation or spacer; (3) the effects of metal thickness and substrate doping on silicide formation are suppressed.

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