Two Packaging Solutions for High Temperature SiC Diode Sensors

2014 ◽  
Vol 778-780 ◽  
pp. 1063-1066 ◽  
Author(s):  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Marian Badila ◽  
Florea Craciunoiu ◽  
Gheorghe Pristavu ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Contact Pressure ◽  
Gold Wire ◽  
Temperature Sensors ◽  
Schottky Barrier Diodes ◽  
Electrical Behavior ◽  
Sensor Performance

A partially electrically isolated package with a gold wire and fully isolated solution with a metallic piston, respectively, are designed and tested for high temperature sensors (400°C) based on SiC Schottky barrier diodes (SBD). Electrical behavior and sensor performance are very close for both packaging solutions. The stress due to contact pressure and higher cost are some disadvantages for pressure contact technology.

High Temperature capable SiC Schottky diodes, based on buried grid design.

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Grid Design ◽  
High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature

2004 ◽  
Vol 457-460 ◽  
pp. 997-1000 ◽  
Author(s):  
Hiroaki Saitoh ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes

scholarly journals Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 87
Author(s):  
Jae-Hoon Lee ◽  
Jung-Hee Lee ◽  
Ki-Sik Im
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Photoelectron Spectroscopy ◽  
Surface States ◽  
Atomic Layer ◽  
Schottky Barrier Diodes ◽  
Al2o3 Layer ◽  
Large Bulk ◽  
Surface Leakage

AlGaN/GaN Schottky barrier diodes (SBDs) with high Al composition and high temperature atomic layer deposition (ALD) Al2O3 layers were investigated. Current–voltage (I–V), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), and capacitance–voltage (C–V) measurements were conducted in order to find the leakage current mechanism and reduce the reverse leakage current. The fabricated AlGaN/GaN SBDs with high Al composition exhibited two orders’ higher leakage current compared to the device with low Al composition (20%) due to large bulk and surface leakage components. The leakage current measured at −60 V for the fabricated SBD with Al2O3 deposited at temperature of 550 °C was decreased to 1.5 μA, compared to the corresponding value of 3.2 mA for SBD with nonpassivation layer. The high quality ALD Al2O3 deposited at high temperature with low interface trap density reduces the donorlike surface states, which effectively decreases surface leakage current of the AlGaN/GaN SBD.

Performance and reliability of β-Ga2O3 Schottky barrier diodes at high temperature

2021 ◽  
Vol 39 (4) ◽  
pp. 040402
Author(s):  
Karen Heinselman ◽  
Patrick Walker ◽  
Andrew Norman ◽  
Philip Parilla ◽  
David Ginley ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes

Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes

2003 ◽  
Vol 433-436 ◽  
pp. 823-826 ◽  
Author(s):  
C. Blasciuc-Dimitriu ◽  
Alton B. Horsfall ◽  
Konstantin Vassilevski ◽  
C. Mark Johnson ◽  
Nicolas G. Wright ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Performance
Sign in / Sign up

Export Citation Format

Share Document