high temperature electronics
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2022 ◽  
Vol 3 (1) ◽  
pp. 27-40
Author(s):  
Alain E. Kaloyeros ◽  
Jonathan Goff ◽  
Barry Arkles

Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window ranging from 650 to 850 °C. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) analyses revealed that the as-deposited films consisted of a Si-C matrix with a Si:C ratio of ~1:1. FTIR and photoluminescence (PL) spectrometry studies showed that films deposited ≥ 750 °C were defect- and H-free within the detection limit of the techniques used, while ellipsometry measurements yielded an as-grown SiC average refractive index of ~2.7, consistent with the reference value for the 3C-SiC phase. The exceptional quality of the films appears sufficient to overcome limitations associated with structural defects ranging from failure in high voltage, high temperature electronics to 2-D film growth. TSCH, a liquid at room temperature with good structural stability during transport and handling as well as high vapor pressure (~10 torr at 25 °C), provides a viable single source precursor for the growth of stoichiometric SiC without the need for post-deposition thermal treatment.


2022 ◽  
Author(s):  
Sandro Rao ◽  
Elisa Demetra Mallemace ◽  
Giuseppe Cocorullo ◽  
Giuliana Faggio ◽  
Giacomo Messina ◽  
...  

Abstract The refractive index and its variation with temperature, i.e. the thermo-optic coefficient, are basic optical parameters for all those semiconductors that are used in the fabrication of linear and non-linear opto-electronic devices and systems. Recently, 4H single-crystal Silicon Carbide (4H-SiC) and Gallium Nitride (GaN) have emerged as excellent building materials for high power and high temperature electronics, and wide parallel applications in photonics can be consequently forecasted in the near future, in particular in the infrared telecommunication band of λ=1500-1600 nm.In this paper, the thermo-optic coefficient (dn/dT) is experimentally measured in 4H-SiC and GaN substrates, from room temperature to 480 K, at the wavelength of 1550 nm. Specifically, the substrates, forming natural Fabry-Perot etalons, are exploited within a simple hybrid fiber–free space optical interferometric system to take accurate measurements of the transmitted optical power in the said temperature range. It is found that, for both semiconductors, dn/dT is itself remarkably temperature dependent, in particular quadratically for GaN and almost linearly for 4H-SiC.


Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 4976
Author(s):  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski ◽  
Klavdia S. Davydovskaya ◽  
Mikhail E. Levinshtein

The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels. With increasing the irradiation temperature, the probability of the formation of these centers decreases, and they are partly annealed out. As a result, the carrier removal rate in SiC becomes ~6 orders of magnitude lower in the case of irradiation at 500 °C. Once again, this proves that silicon carbide is promising as a material for high-temperature electronics devices.


Author(s):  
Ardalan Nasiri ◽  
Simon Ang

Abstract Alumina-based die attach and encapsulation for high-temperature (300oC to 500oC) electronic packaging were investigated. The alumina paste material comprises of aluminum dihydric phosphate as a binder and alumina powder as a filler with embedded nano aluminum nitride and nano-silica powders to promote its curing process, reduce its curing tension, and increase its bond shear strength. The chip-to-substrate bond strength was enhanced and met the MIL-STD-883 2019.9 requirements for die-attach assembly. Its encapsulation property was improved with fewer cracks compared to similar commercial ceramic encapsulants. The die-attach material and encapsulation properties tested at 500°C showed no defect or additional cracks. Thermal aging and thermal cycling were carried out on the samples. XPS analysis revealed a higher oxygen bonding percentage for the 10% nanosilica ceramic sample than the samples with no nano-silica. XRD peak broadening is largest for the 10% nano-silica ceramic which indicated smaller crystallite sizes. The smaller crystallite size for the 10% nanosilica sample introduces a larger microstrain to the alumina crystal structure. FTIR revealed the presence of alumina-silicate bonds on these samples with the largest amount present in the 10% nanosilica samples. Si-O and Al-O bonds were observed from FTIR on nanosilica samples especially the higher than 10% nanosilica samples. SEM and EDX results showed a uniform bond line for the 10% sample and uniform material distribution.


2020 ◽  
Vol 111 ◽  
pp. 113727
Author(s):  
Hongqiang Zhang ◽  
Hailin Bai ◽  
Qiang Jia ◽  
Wei Guo ◽  
Guisheng Zou ◽  
...  

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