Effect of annealing atmosphere on hydration behavior of MgO thin film in tunneling magnetoresistance sensor

2021 ◽  
Author(s):  
Mongkol Kongtunmon ◽  
Laddawan Supadee ◽  
Worasom Kundhikanjana ◽  
Pattanaphong Janphuang ◽  
Ratchadaporn Supruangnet ◽  
...  
Keyword(s):  
Thin Film ◽  
Tunneling Magnetoresistance ◽  
Annealing Atmosphere

scholarly journals Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1875
Author(s):  
Hwan-Seok Jeong ◽  
Hyun Seok Cha ◽  
Seong Hyun Hwang ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Hydroxyl Groups ◽  
Annealing Atmosphere ◽  
Electrical Stability ◽  
Indium Gallium

In this study, we examined the effects of the annealing atmosphere on the electrical performance and stability of high-mobility indium-gallium-tin oxide (IGTO) thin-film transistors (TFTs). The annealing process was performed at a temperature of 180 °C under N2, O2, or air atmosphere after the deposition of IGTO thin films by direct current magnetron sputtering. The field-effect mobility (μFE) of the N2- and O2-annealed IGTO TFTs was 26.6 cm2/V·s and 25.0 cm2/V·s, respectively; these values were higher than that of the air-annealed IGTO TFT (μFE = 23.5 cm2/V·s). Furthermore, the stability of the N2- and O2-annealed IGTO TFTs under the application of a positive bias stress (PBS) was greater than that of the air-annealed device. However, the N2-annealed IGTO TFT exhibited a larger threshold voltage shift under negative bias illumination stress (NBIS) compared with the O2- and air-annealed IGTO TFTs. The obtained results indicate that O2 gas is the most suitable environment for the heat treatment of IGTO TFTs to maximize their electrical properties and stability. The low electrical stability of the air-annealed IGTO TFT under PBS and the N2-annealed IGTO TFT under NBIS are primarily attributed to the high density of hydroxyl groups and oxygen vacancies in the channel layers, respectively.

scholarly journals Effect of annealing atmosphere on LiMn2O4 for thin film Li-ion batteries from aqueous chemical solution deposition

2016 ◽  
Vol 4 (47) ◽  
pp. 18457-18469 ◽  
Author(s):  
G. Maino ◽  
J. D'Haen ◽  
F. Mattelaer ◽  
C. Detavernier ◽  
A. Hardy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Solution Deposition ◽  
Annealing Atmosphere ◽  
Li Ion Batteries ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Current Collectors ◽  
Li Ion

Aqueous CSD provides LMO thin films at low T in a N2 ambient, eliminating issues with stacking and sensitive current collectors.

scholarly journals Effects of annealing atmosphere on the performance of Cu(InGa)Se 2 films sputtered from quaternary targets

2020 ◽  
Vol 7 (10) ◽  
pp. 200662
Author(s):  
Leng Zhang ◽  
Yongyi Yu ◽  
Jing Yu ◽  
Yaowei Wei
Keyword(s):  
Thin Film ◽  
Low Cost ◽  
Lower Amount ◽  
Annealing Atmosphere ◽  
Free Atmosphere ◽  
Recombination Mechanism ◽  
Depth Profiles ◽  
Interface Recombination ◽  
Cigs Thin Film ◽  
Device Efficiency

Quaternary sputtering without additional selenization is a low-cost alternative method for the preparation of Cu(InGa)Se 2 (CIGS) thin film for photovoltaics. However, without selenization, the device efficiency is much lower than that with selenization. To comprehensively examine this problem, we compared the morphologies, depth profiles, compositions, electrical properties and recombination mechanism of the absorbers fabricated with and without additional selenization. The results revealed that the amount of surface Se on CIGS films annealed in a Se-free atmosphere is less than that on CIGS films annealed in a Se-containing atmosphere. Additionally, the lower amount of surface Se reduced the carrier concentration, enhanced the resistivity of the CIGS film and allowed CIGS/CdS interface recombination to be the dominant recombination mechanism of CIGS device. The increase of interface recombination reduced the efficiency of the device annealed in a Se-free atmosphere.

Effect of annealing atmosphere on IGZO thin film transistors on a deformable softening polymer substrate

2018 ◽  
Vol 33 (9) ◽  
pp. 095001 ◽  
Author(s):  
G Gutierrez-Heredia ◽  
J Maeng ◽  
J Conde ◽  
O Rodriguez-Lopez ◽  
W E Voit
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polymer Substrate ◽  
Annealing Atmosphere

scholarly journals Influence of annealing atmosphere on the performance of a β-Ga2O3 thin film and photodetector

2018 ◽  
Vol 8 (8) ◽  
pp. 2229 ◽  
Author(s):  
Zhaoqing Feng ◽  
Lu Huang ◽  
Qian Feng ◽  
Xiang Li ◽  
Hui Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Annealing Atmosphere ◽  
Ga2o3 Thin Film

The Effect of Annealing Atmosphere on Electrical Properties of BST Thin Films Prepared on Copper Foils

2009 ◽  
Vol 79-82 ◽  
pp. 831-834
Author(s):  
Yan Hua Fan ◽  
Shu Hui Yu ◽  
Shuai Qin Yu ◽  
Li Hua Dong ◽  
Wei Ke Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Perovskite Phase ◽  
Inert Atmosphere ◽  
Dielectric Constants ◽  
Annealing Atmosphere ◽  
Sem Images ◽  
Bst Thin Films ◽  
Copper Foils ◽  
Bst Thin Film

Ba0.7Sr0.3TiO3 (BST) thin films have been prepared on copper foils via sol-gel method in almost inert atmosphere containing different level of oxygen which was achieved by flowing high purified argon with the varied rate from 0.3 L/min to 2.0 L/min. X-ray diffraction pattern of the BST thin film exhibits dominant perovskite phase. SEM images reveal good crystallization and much dense structure of the thin film. The BST thin film annealed at almost inert atmosphere by flowing the high purified argon at the rate of 0.5 L/min, exhibits highest dielectric constants which are 1549.65 and 1350.86 at the frequency of 10 kHz and 1 MHz, respectively. Additionally, the film also shows optimized ferroelectric behavior and low leakage current density. The mechanism of the annealing atmosphere on properties of BST thin films was investigated.

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