Direct observation of interfacial charge transfer from silver to organic semiconductors

2004 ◽  
Vol 384 (4-6) ◽  
pp. 197-202 ◽  
Author(s):  
T. Schwieger ◽  
H. Peisert ◽  
M. Knupfer
Keyword(s):  
Charge Transfer ◽  
Organic Semiconductors ◽  
Direct Observation ◽  
Interfacial Charge Transfer ◽  
Interfacial Charge

scholarly journals Identifying the acceptor state in NiO hole collection layers: direct observation of exciton dissociation and interfacial hole transfer across a Fe2O3/NiO heterojunction

2018 ◽  
Vol 20 (38) ◽  
pp. 24545-24552 ◽  
Author(s):  
Somnath Biswas ◽  
Jakub Husek ◽  
Stephen Londo ◽  
Elizabeth A. Fugate ◽  
L. Robert Baker
Keyword(s):  
Charge Transfer ◽  
Direct Observation ◽  
Transfer Mechanism ◽  
Acceptor State ◽  
Exciton Dissociation ◽  
Hole Transfer ◽  
Interfacial Charge Transfer ◽  
Charge Transfer Mechanism ◽  
Interfacial Charge

Ultrafast XUV reflection–absorption identifies interfacial charge transfer mechanism and the hole acceptor state in a Fe2O3/NiO model heterojunction

The suppression of spin–orbit coupling effect by the ZnO layer of La0.7Sr0.3MnO3/ZnO heterostructures grown on (001) oriented Si restores the negative magnetoresistance

Nanoscale ◽  
2021 ◽  
Author(s):  
Bibekananda Das ◽  
Prahallad Padhan
Keyword(s):  
Charge Transfer ◽  
Coupling Effect ◽  
Orbit Coupling ◽  
Negative Magnetoresistance ◽  
Magnetic Scattering ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Interfacial Charge Transfer ◽  
Positive Magnetoresistance ◽  
Interfacial Charge

In Si–La0.7Sr0.3MnO3, the interfacial charge transfer driven strong localized antiferromagnetic and spin–orbit couplings favor positive magnetoresistance, which is suppressed by strong magnetic scattering induced by the top ZnO layer results in negative magnetoresistance.

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