Photoelectron spectroscopy and photochemistry of tetracyanoethylene radical anion in the gas phase

2012 ◽  
Vol 550 ◽  
pp. 15-18 ◽  
Author(s):  
Dmitry Khuseynov ◽  
Matthew T. Fontana ◽  
Andrei Sanov
2016 ◽  
Vol 7 (2) ◽  
pp. 1142-1150 ◽  
Author(s):  
David A. Hrovat ◽  
Gao-Lei Hou ◽  
Bo Chen ◽  
Xue-Bin Wang ◽  
Weston Thatcher Borden

The CO3 radical anion (CO3˙−) has been formed by electrospraying carbonate dianion (CO32−) into the gas phase.


Author(s):  
Chao-Jiang Zhang ◽  
Peng Wang ◽  
Xi-Ling Xu ◽  
Hong-Guang Xu ◽  
Weijun Zheng

The AlnC5- (n = 1-5) clusters were detected in the gas-phase and were investigated by mass-selected anion photoelectron spectroscopy. The structures of AlnC5-/0 (n = 1-5) were explored by theoretical...


Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.


2005 ◽  
Vol 44 (25) ◽  
pp. 9283-9287 ◽  
Author(s):  
Xiaoqing Zeng ◽  
Maofa Ge ◽  
Zheng Sun ◽  
Dianxun Wang

2002 ◽  
Vol 09 (01) ◽  
pp. 583-586
Author(s):  
KOTA IWASAKI ◽  
KOICHIRO MITSUKE

A new angle-resolving electron energy analyzer composed of a conical electrostatic prism and a position-sensitive detector was developed for gas phase photoelectron spectroscopy. The performance of the analyzer has been tested by measuring photoelectron spectra of Ar using a helium discharge lamp. The angular resolution of 3° was achieved at the pass energy E of 5.6 eV. The best energy resolution was ΔE/E = 0.043 at E = 1.4 eV .


1981 ◽  
Vol 36 (11) ◽  
pp. 1246-1252 ◽  
Author(s):  
Michael H. Palmer ◽  
Isobel Simpson ◽  
J. Ross Wheeler

The photoelectron spectra of the tautomeric 1,2,3,- and 1,2,4-triazole and 1,2,3,4-tetrazole systems have been compared with the corresponding N-methyl derivatives. The dominant tautomers in the gas phase have been identified as 2 H-1,2,3-triazole, 1 H-1,2,4-triazole and 2H-tetrazole.Full optimisation of the equilibrium geometry by ab initio molecular orbital methods leads to the same conclusions, for relative stability of the tautomers in each of the triazoles, but the calculations wrongly predict the tetrazole tautomerism.


1984 ◽  
Vol 53 (2) ◽  
pp. 465-477 ◽  
Author(s):  
J.M. Dyke ◽  
B.W.J. Gravenor ◽  
G.D. Josland ◽  
R.A. Lewis ◽  
A. Morris

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