Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

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The Etching Reaction and Surface Reconstruction of Bismuth Zinc Niobate Thin Film in SF6/Ar Plasma

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.763.28 ◽

2013 ◽

Vol 763 ◽

pp. 28-32

Author(s):

Shu Ya Wang ◽

Yun Ying Fu ◽

Li Ping Dai ◽

Guo Jun Zhang

Keyword(s):

Surface Reconstruction ◽

Photoelectron Spectroscopy ◽

Reactive Ion Etching ◽

Pyrochlore Structure ◽

Film Surface ◽

Optimum Process ◽

Ion Etching ◽

X Ray ◽

Bismuth Zinc Niobate ◽

Ar Plasma

Reactive ion etching (RIE) of bismuth zinc niobate (BZN) thin films using an SF6/Ar plasma has been studied. An optimum process parameters was obtained according to the highest etch rate of 90nm/min. Under this etching condition, the crystal structural properties and surface morphology of the BZN film before and after etching were characterized using X-ray diffraction (XRD), the film showed a surface reconstruction after etching, a cubic pyrochlore structure orientation transition was observed from preferential (222) to (400), and ZnF2 phases were detected. The film surface was chemically analyzed by X-ray photoelectron spectroscopy (XPS) to investigate the reactive ion etching mechanism. A zinc-rich surface was formed because low-volatile ZnF2 residues were difficult to remove.

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Erratum to: Gas‐phase chemistry and reactive‐ion etching kinetics for silicon‐based materials in C 4 F 8 + O 2 + Ar plasma

Plasma Processes and Polymers ◽

10.1002/ppap.20207024 ◽

2021 ◽

Author(s):

Byung J. Lee ◽

Alexander Efremov ◽

Kwang‐Ho Kwon

Keyword(s):

Gas Phase ◽

Reactive Ion Etching ◽

Ion Etching ◽

Gas Phase Chemistry ◽

Ar Plasma ◽

Phase Chemistry ◽

Silicon Based

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Gas‐phase chemistry and reactive‐ion etching kinetics for silicon‐based materials in C 4 F 8 + O 2 + Ar plasma

Plasma Processes and Polymers ◽

10.1002/ppap.202000249 ◽

2021 ◽

Author(s):

Byung Jun Lee ◽

Alexander Efremov ◽

Kwang‐Ho Kwon

Keyword(s):

Gas Phase ◽

Reactive Ion Etching ◽

Ion Etching ◽

Gas Phase Chemistry ◽

Ar Plasma ◽

Phase Chemistry ◽

Silicon Based

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Neural-Network-Based Sensor Fusion of Optical Emission and Mass Spectroscopy Data for Real-Time Fault Detection in Reactive Ion Etching

IEEE Transactions on Industrial Electronics ◽

10.1109/tie.2005.851663 ◽

2005 ◽

Vol 52 (4) ◽

pp. 1063-1072 ◽

Cited By ~ 27

Author(s):

S.J. Hong ◽

G.S. May

Keyword(s):

Neural Network ◽

Fault Detection ◽

Real Time ◽

Sensor Fusion ◽

Mass Spectroscopy ◽

Reactive Ion Etching ◽

Optical Emission ◽

Spectroscopy Data ◽

Ion Etching

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X-ray photoelectron spectroscopy analyses of silicon dioxide contact holes etched in a magnetically enhanced reactive ion etching reactor

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590008 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1051 ◽

Cited By ~ 16

Author(s):

P. Czuprynski

Keyword(s):

Silicon Dioxide ◽

Photoelectron Spectroscopy ◽

Reactive Ion Etching ◽

Ion Etching ◽

X Ray

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Chemistry studies of SF6/CF4, SF6/O2 and CF4/O2 gas phase during hollow cathode reactive ion etching plasma

Vacuum ◽

10.1016/j.vacuum.2014.03.003 ◽

2014 ◽

Vol 106 ◽

pp. 64-68 ◽

Cited By ~ 11

Author(s):

L.L. Tezani ◽

R.S. Pessoa ◽

H.S. Maciel ◽

G. Petraconi

Keyword(s):

Gas Phase ◽

Hollow Cathode ◽

Reactive Ion Etching ◽

Ion Etching

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Study of Reactive Ion Etching of the Si3 N 4 / GaAs Interface in CF 4 Plasmas by X‐Ray Photoelectron Spectroscopy and X‐Ray Photoelectron Diffraction

Journal of The Electrochemical Society ◽

10.1149/1.2097363 ◽

1989 ◽

Vol 136 (8) ◽

pp. 2361-2367 ◽

Cited By ~ 8

Author(s):

P. Alnot ◽

J. Olivier ◽

F. Wyczisk ◽

R. Joubard

Keyword(s):

Photoelectron Spectroscopy ◽

Reactive Ion Etching ◽

Ion Etching ◽

X Ray ◽

Photoelectron Diffraction

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Dry Etching Damage in GaAs and Al0.22Ga0.78As

MRS Proceedings ◽

10.1557/proc-76-163 ◽

1986 ◽

Vol 76 ◽

Author(s):

D. Kirillov ◽

C. B. Cooper ◽

R. A. Powell

Keyword(s):

Raman Spectroscopy ◽

Crystal Lattice ◽

Reactive Ion Etching ◽

Dry Etching ◽

Type Material ◽

Plasma Cleaning ◽

Electrical Characteristics ◽

Ion Etching ◽

Phonon Spectra ◽

Ar Plasma

ABSTRACTReactive ion etching induced damage in GaAs and Al0.22Ga0.78As was studied using Raman spectroscopy. The phonon spectra of undoped materials allow evaluation of damage to the crystal lattice and the coupled plasmonphonon spectra of n-type material provide a sensitive probe of electrical characteristics. Studies were made of layers exposed to plasmas of Ar, SF6 and SiCl4. Conditions for low damage Ar plasma cleaning and for dielectric cap removal by SF6 were established. Etching in the SiCl4 plasma generally produced strong damage, although low damage etching was observed in a few cases.

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Characterization of Sidewall Residue Film and Atomic Structure of the Trench Formed by BCI3/CI2 Reactive Ion Etching

MRS Proceedings ◽

10.1557/proc-158-431 ◽

1989 ◽

Vol 158 ◽

Author(s):

Sun Jin Yun ◽

Young-Jin Jeon ◽

Jeong Y. Lee

Keyword(s):

Photoelectron Spectroscopy ◽

Secondary Ion Mass Spectrometry ◽

Reactive Ion Etching ◽

Surface Region ◽

Bottom Surface ◽

Silicon Substrates ◽

Ion Etching ◽

Transmission Electron ◽

Physical Sputtering ◽

20 Nm

ABSTRACTThe silicon trench etching in BCl3/Cl2 reactive ion etching plasma leads to the intrinsic bonding damage, the permeations of etching species and impurities into silicon substrates, and the deposition of residue film on trench sidewall. The contaminations and the damages in trench were investigated by using high resolution transmission electron microscopy (HRTEM), secondary ion mass spectrometry (SIMS), and x-ray photoelectron spectroscopy (XPS). The microstructure of the rounded bottom surface showed that the surface region was distorted by 2 - 6 atomic layers and the trench etch was mainly limited by the physical sputtering-like mechanism. The damage in the silicon lattice consisted of prominent planar defects roughly confined to {110} and {111} planes. The thickness of sidewall residue film was 10 - 90 nm, which was thinner at deeper region of the trench, whereas that of residue film at the trench bottom was 1.5 - 3.5 nm. The SIMS results of no-patterned specimen presented that the permeation depths of boron and chlorine into the Si-substrate were about 40 and 20 nm, respectively. The presence of BxCly and Cl-related Si chemical states was identified from XPS analysis of the residue film.

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