Investigation on etching selectivity and microstructure of Ag doped Sb2Te thin film for dry lithography

Dry lithography is a promising micro/nanomanufacturing method owing to its advantages of solution-free, absence of undercut and resist swelling. However, heat-mode resist suitable for dry lithography is less reported. This work reported Ag doped Sb2Te thin film as heat-mode resist, and its etching selectivity and microstructures are investigated in detail. It is found that Ag1.44Sb2.19Te thin film possesses high etching selectivity in CHF3/O2 mixed gases and can act as a heat-mode resist. In order to elucidate the mechanism of high etching selectivity, the microstructures of the Ag doped Sb2Te thin films are analyzed according to XRD, Raman spectra, XPS, and TEM methods. Results implies that the etching selectivity is attributed to the phase separation of Ag1.44Sb2.19Te film and formation of Sb phase after laser exposure, leading to the reduction of etching resistance in CHF3/O2 mixed gases. Besides, the pattern transfers from Ag1.44Sb2.19Te to SiO2 and Si substrates are achieved successfully and the etching selectivity of Si or SiO2 to Ag1.44Sb2.19Te are both higher than 2:1. This work may provide a useful guide for the research of dry lithography without wet development.

Reduction of EUV resist damage by neutral beam etching

Even though EUV lithography has the advantage of implenting a finer pattern compared to ArF immersion lithography due to the use of 13.5 nm instead of 193 nm as the wavelengh of the light source, due to the low energy of EUV light source, EUV resist has a thinner thickness than conventional ArF resist. EUV resist having such a thin thickness is more vulnerable to radiation damage received during the etching because of its low etch resistance and also tends to have a problem of low etch selectivity. In this study, the radiation damage to EUV resist during etching of hardmask materials such as Si3N4, SiO2, etc. using CF4 gas was compared between neutral beam etching (NBE) and ion beam etching (IBE). When NBE was used, after the etching of 20 nm thick EUV resist, the line edge roughness (LER) increase and the critical dimension (CD) change of EUV resist were reduced by ~ 1/3 and ~ 1/2, respectively, compared to those by IBE. Also, at that EUV etch depth, the RMS(root mean square) surface roughness value of EUV resist etched by NBE was ~2/3 compared to that by IBE on the average. It was also confirmed that the etching selectivity between SiO2, Si3N4, etc. and EUV resist was higher for NBE compared to IBE. The less damage to the EUV resist and the higher etch selectivity of materials such as Si3N4 and SiO2 over EUV resist for NBE compared to IBE are believed to be related to the no potential energy released by the neutralization of the ions during the etching for NBE.

Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

For the formation of nano-scale Ge channels in vertical Gate-all-around field-effect transistors (vGAAFETs), the selective isotropic etching of Ge selective to Ge0.8Si0.2 was considered. In this work, a dual-selective atomic layer etching (ALE), including Ge0.8Si0.2-selective etching of Ge and crystal-orientation selectivity of Ge oxidation, has been developed to control the etch rate and the size of the Ge nanowires. The ALE of Ge in p+-Ge0.8Si0.2/Ge stacks with 70% HNO3 as oxidizer and deionized (DI) water as oxide-removal was investigated in detail. The saturated relative etched amount per cycle (REPC) and selectivity at different HNO3 temperatures between Ge and p+-Ge0.8Si0.2 were obtained. In p+-Ge0.8Si0.2/Ge stacks with (110) sidewalls, the REPC of Ge was 3.1 nm and the saturated etching selectivity was 6.5 at HNO3 temperature of 20 °C. The etch rate and the selectivity were affected by HNO3 temperatures. As the HNO3 temperature decreased to 10 °C, the REPC of Ge was decreased to 2 nm and the selectivity remained at about 7.4. Finally, the application of ALE in the formation of Ge nanowires in vGAAFETs was demonstrated where the preliminary Id–Vds output characteristic curves of Ge vGAAFET were provided.

Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

Optimization of selective laser-induced etching (SLE) for fabrication of 3D glass microfluidic device with multi-layer micro channels

We present the selective laser-induced etching (SLE) process and design guidelines for the fabrication of three-dimensional (3D) microfluidic channels in a glass. The SLE process consisting of laser direct patterning and wet chemical etching uses different etch rates between the laser modified area and the unmodified area. The etch selectivity is an important factor for the processing speed and the fabrication resolution of the 3D structures. In order to obtain the maximum etching selectivity, we investigated the process window of the SLE process: the laser pulse energy, pulse repetition rate, and scan speed. When using potassium hydroxide (KOH) as a wet etchant, the maximum etch rate of the laser-modified glass was obtained to be 166 μm/h, exhibiting the highest selectivity about 333 respect to the pristine glass. Based on the optimized process window, a 3D microfluidic channel branching to three multilayered channels was successfully fabricated in a 4 mm-thick glass. In addition, appropriate design guidelines for preventing cracks in a glass and calibrating the position of the dimension of the hollow channels were studied.

FABRICATION OF WELL-DEVELOPED SURFACE OF SYNTHETIC DIAMOND SINGLE CRYSTALS FOR INCREASING IN SPECIFIC POWER OF BETAVOLTAIC POWER SUPPLIES ON THEIR BASE

The process of the reactive ion etching of synthetic monocrystalline diamond with thick aluminum oxide and aluminum nitride protective masks for increasing the surface of diamond was studied. The etching selectivity of aluminum oxide and aluminum nitride were determined. The relief structures in a shape of ribs with more than 2 µm height, 5 µm period and 45° profile slope were fabricated on diamond surface. These structures increase the effective surface area 1.3 times.