Required nearest-neighbor Coulomb interactions for a charge-ordered phase transition in (TMTTF)2MF6 with inversion symmetry breaking in crystal

2021 ◽  
pp. 139254
Author(s):  
Naoki Kitamura ◽  
Yuki Kurashige
2001 ◽  
Vol 15 (28n30) ◽  
pp. 3714-3717 ◽  
Author(s):  
P. HUAI ◽  
K. NASU

We theoretically study the photoinduced ionic→neutral phase transition in the quasi-one-dimensional molecular crystal TTF-CA. Our theoretical model includes strong intra-chain Coulomb interactions as well as very weak inter-chain interactions. Within the mean-field picture, we investigate the nonlinear lattice relaxation of a charge transfer exciton, and clarify the adiabatic path from its Franck-Condon state to a macroscopic neutral domain. It is found that the lowest state of such a single charge transfer exciton can not relax down to the neutral domain straightly, but a large excess energy is necessary so that it can overcome a high barrier. The aggregation of two identically shaped neutral domains is also discussed.


2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Kenan Zhang ◽  
Changhua Bao ◽  
Qiangqiang Gu ◽  
Xiao Ren ◽  
Haoxiong Zhang ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Milad Jangjan ◽  
Mir Vahid Hosseini

AbstractWe theoretically report the finding of a new kind of topological phase transition between a normal insulator and a topological metal state where the closing-reopening of bandgap is accompanied by passing the Fermi level through an additional band. The resulting nontrivial topological metal phase is characterized by stable zero-energy localized edge states that exist within the full gapless bulk states. Such states living on a quasi-one-dimensional system with three sublattices per unit cell are protected by hidden inversion symmetry. While other required symmetries such as chiral, particle-hole, or full inversion symmetry are absent in the system.


2021 ◽  
Vol 118 (22) ◽  
pp. 221603
Author(s):  
G. Storeck ◽  
K. Rossnagel ◽  
C. Ropers

2013 ◽  
Vol 135 (25) ◽  
pp. 9366-9376 ◽  
Author(s):  
Cyprien Lemouchi ◽  
Konstantinos Iliopoulos ◽  
Leokadiya Zorina ◽  
Sergey Simonov ◽  
Pawel Wzietek ◽  
...  

2015 ◽  
Vol 2 (1) ◽  
pp. 1500196 ◽  
Author(s):  
Arnab Sen Gupta ◽  
Hirofumi Akamatsu ◽  
Megan E. Strayer ◽  
Shiming Lei ◽  
Toshihiro Kuge ◽  
...  

1997 ◽  
Vol 08 (03) ◽  
pp. 301-315 ◽  
Author(s):  
Marcel J. Nijman ◽  
Hilbert J. Kappen

A Radial Basis Boltzmann Machine (RBBM) is a specialized Boltzmann Machine architecture that combines feed-forward mapping with probability estimation in the input space, and for which very efficient learning rules exist. The hidden representation of the network displays symmetry breaking as a function of the noise in the dynamics. Thus, generalization can be studied as a function of the noise in the neuron dynamics instead of as a function of the number of hidden units. We show that the RBBM can be seen as an elegant alternative of k-nearest neighbor, leading to comparable performance without the need to store all data. We show that the RBBM has good classification performance compared to the MLP. The main advantage of the RBBM is that simultaneously with the input-output mapping, a model of the input space is obtained which can be used for learning with missing values. We derive learning rules for the case of incomplete data, and show that they perform better on incomplete data than the traditional learning rules on a 'repaired' data set.


1995 ◽  
Vol 396 ◽  
Author(s):  
SH.M. Makhkamov ◽  
S.N. Abdurakhmanova

AbstractStudies of galvanomagnetic and electrical parameters of p- type Si : SiO2 in the temperature range 80 – 400 K have shown that X-ray irradiation at 80 K (Mo Ka,β and braking radiation hvmax. = 50 heV) leads to various transformations of the spectrum of electron- hole states in the band gap of such material, depending on the flux density of the X-rays. Two main processes are observed: the defect (vacancy and divacancy) formation and a charge exchange of native defects localized at the Si – SiO2 interface. The charge exchange process is rather collective and stimulated one because it is in response to an X-ray-induced ferroelectric phase transition in the SiO2- phase.


1998 ◽  
Vol 327-329 ◽  
pp. 391-394
Author(s):  
Keiichi Ikegami ◽  
Shin-ichi Kuroda ◽  
Tomoyuki Akutagawa ◽  
Taro Konuma ◽  
Takayoshi Nakamura ◽  
...  

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