Microstructures, thermal and electric properties of bismuth vanadium oxide (BiVO4) as an anode in electrolysis systems coated with a conductive glass indium thin oxide (ITO)

We report on the modification of the electric properties of the imidazolium-based [BMIM][NTf2] ionic liquid upon surface confinement in the sub-monolayer regime. Solid-like insulating nanostructures of [BMIM][NTf2] spontaneously form on a variety of insulating substrates, at odd with the liquid and conductive nature of the same substances in the bulk phase. A systematic spatially resolved investigation by atomic force microscopy of the morphological, mechanical and electrical properties of [BMIM][NTf2] nanostructures showed that this liquid substance rearranges into lamellar nanostructures with a high degree of vertical order and enhanced resistance to mechanical compressive stresses and very intense electric fields, denoting a solid-like character. The morphological and structural reorganization has a profound impact on the electric properties of supported [BMIM][NTf2] islands, which behave like insulator layers with a relative dielectric constant between 3 and 5, comparable to those of conventional ionic solids, and significantly smaller than those measured in the bulk ionic liquid. These results suggest that in the solid-like ordered domains confined either at surfaces or inside the pores of the nanoporous electrodes of photo-electrochemical devices, the ionic mobility and the overall electrical properties can be significantly perturbed with respect to the bulk liquid phase, which would likely influence the<br>performance of the devices.<br>

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Study of the microstructure and particles of vanadium (III) oxide, vanadium (V) oxide and lithium aluminate powders

Industrial laboratory Diagnostics of materials ◽

10.26896/1028-6861-2020-86-1-32-37 ◽

2020 ◽

Vol 86 (1) ◽

pp. 32-37

Author(s):

Valeria A. Brodskaya ◽

Oksana A. Molkova ◽

Kira B. Zhogova ◽

Inga V. Astakhova

Keyword(s):

Particle Size ◽

Particle Size Distribution ◽

Vanadium Oxide ◽

Size Distribution ◽

Microstructural Analysis ◽

Coherent Scattering ◽

Powder Materials ◽

Lithium Aluminate ◽

Range Limit ◽

Oxide Particles

Powder materials are widely used in the manufacture of electrochemical elements of thermal chemical sources of current. Electrochemical behavior of the powders depends on the shape and size of their particles. The results of the study of the microstructure and particles of the powders of vanadium (III), (V) oxides and lithium aluminate obtained by transmission electron and atomic force microscopy, X-ray diffraction and gas adsorption analyses are presented. It is found that the sizes of vanadium (III) and vanadium (V) oxide particles range within 70 – 600 and 40 – 350 nm, respectively. The size of the coherent-scattering regions of the vanadium oxide particles lies in the lower range limit which can be attributed to small size of the structural elements (crystallites). An average volumetric-surface diameter calculated on the basis of the surface specific area is close to the upper range limit which can be explained by the partial agglomeration of the powder particles. Unlike the vanadium oxide particles, the range of the particle size distribution of the lithium aluminate powder is narrower — 50 – 110 nm. The values of crystallite sizes are close to the maximum of the particle size distribution. Microstructural analysis showed that the particles in the samples of vanadium oxides have a rounded (V2O3) or elongated (V2O5) shape; whereas the particles of lithium aluminate powder exhibit lamellar structure. At the same time, for different batches of the same material, the particle size distribution is similar, which indicates the reproducibility of the technologies for their manufacture. The data obtained can be used to control the constancy of the particle size distribution of powder materials.

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Development of Backside Scanning Capacitance Microscopy Technique for Advanced SOI Microprocessors

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2006p0094 ◽

2006 ◽

Author(s):

Vinod Narang ◽

P. Muthu ◽

J.M. Chin ◽

Vanissa Lim

Keyword(s):

Plasma Etching ◽

Data Interpretation ◽

Parameters Optimization ◽

Scanning Capacitance Microscopy ◽

Microscopy Technique ◽

Thermal Oxide ◽

Specific Analysis ◽

Thin Oxide ◽

P Type ◽

Uv Ozone

Abstract Implant related issues are hard to detect with conventional techniques for advanced devices manufactured with deep sub-micron technology. This has led to introduction of site-specific analysis techniques. This paper presents the scanning capacitance microscopy (SCM) technique developed from backside of SOI devices for packaged products. The challenge from backside method includes sample preparation methodology to obtain a thin oxide layer of high quality, SCM parameters optimization and data interpretation. Optimization of plasma etching of buried oxide followed by a new method of growing thin oxide using UV/ozone is also presented. This oxidation method overcomes the limitations imposed due to packaged unit not being able to heat to high temperature for growing thermal oxide. Backside SCM successfully profiled both the n and p type dopants in both cache and core transistors.

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