Modeling of effective design of high pressure anvils used for large scale commercial production of gem quality large single crystal diamond

2011 ◽  
Vol 20 (7) ◽  
pp. 969-973 ◽  
Author(s):  
Qi-Gang Han ◽  
Ming-Zhe Li ◽  
Xiao-Peng Jia ◽  
Hong-An Ma ◽  
Yuefen Li
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Large Scale ◽  
Commercial Production ◽  
Large Single Crystal ◽  
Single Crystal Diamond ◽  
Effective Design

Design an Effective Solution for Commercial Production and Scientific Research on Gem-Quality, Large, Single-Crystal Diamond by High Pressure and High Temperature

2011 ◽  
Vol 11 (4) ◽  
pp. 1000-1005 ◽  
Author(s):  
Qi-Gang Han ◽  
Bao Liu ◽  
Mei-hua Hu ◽  
Zhan-chang Li ◽  
Xiao-Peng Jia ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Single Crystal ◽  
Scientific Research ◽  
Commercial Production ◽  
Effective Solution ◽  
Large Single Crystal ◽  
Single Crystal Diamond

Large single crystal diamond grown in FeNiMnCo–S–C system under high pressure and high temperature conditions

2016 ◽  
Vol 25 (11) ◽  
pp. 118104 ◽  
Author(s):  
He Zhang ◽  
Shangsheng Li ◽  
Taichao Su ◽  
Meihua Hu ◽  
Guanghui Li ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Single Crystal ◽  
Large Single Crystal ◽  
Temperature Conditions ◽  
Single Crystal Diamond

Si Doping Effects on the Growth of Large Single-Crystal Diamond in a Ni-Based Metal Catalyst System under High Pressure and High Temperature

2019 ◽  
Vol 19 (7) ◽  
pp. 3955-3961 ◽  
Author(s):  
Chao Fang ◽  
Weixia Shen ◽  
Yuewen Zhang ◽  
Peiyang Mu ◽  
Zhuangfei Zhang ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Single Crystal ◽  
Catalyst System ◽  
Metal Catalyst ◽  
Large Single Crystal ◽  
Si Doping ◽  
Doping Effects ◽  
Single Crystal Diamond

scholarly journals Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD

2021 ◽  
Vol 1 (1) ◽  
pp. 143-149
Author(s):  
Wei Cao ◽  
Deng Gao ◽  
Hongyang Zhao ◽  
Zhibin Ma
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Lateral Growth ◽  
Single Crystal Diamond

The regulating effect of cooling water temperature on the axial growth rate of large single crystal diamond under HPHT conditions

2019 ◽  
Vol 522 ◽  
pp. 5-10 ◽  
Author(s):  
Yadong Li ◽  
Fangbiao Wang ◽  
Chunxiao Wang ◽  
Liangchao Chen ◽  
Longsuo Guo ◽  
...  
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
Water Temperature ◽  
Cooling Water ◽  
Large Single Crystal ◽  
Cooling Water Temperature ◽  
Single Crystal Diamond ◽  
Axial Growth

Stress analysis of the multi-layer stagger-split die for synthesizing gem quality large single crystal diamond

2018 ◽  
Vol 83 ◽  
pp. 54-59
Author(s):  
Liang Zhao ◽  
Mingzhe Li ◽  
Rui Li ◽  
Erhu Qu ◽  
Liyan Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Stress Analysis ◽  
Large Single Crystal ◽  
Single Crystal Diamond

Conducting boron-doped single-crystal diamond films for high pressure research

2011 ◽  
Vol 31 (3) ◽  
pp. 388-398 ◽  
Author(s):  
Gopi K. Samudrala ◽  
Georgiy Tsoi ◽  
Andrei V. Stanishevsky ◽  
Jeffrey M. Montgomery ◽  
Yogesh K. Vohra ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Diamond Films ◽  
Boron Doped ◽  
Single Crystal Diamond

Assembling the Building Blocks for Diamond Electronics

2006 ◽  
Vol 956 ◽  
Author(s):  
William Joseph Yost
Keyword(s):  
Single Crystal ◽  
Large Scale ◽  
Building Blocks ◽  
Thin Layers ◽  
Bulk Single Crystal ◽  
High Quality ◽  
Ambient Temperatures ◽  
Single Crystal Diamond ◽  
Key Issues ◽  
Grade Material

ABSTRACTThe desire to exploit the extreme properties which differentiate diamond from other, more mature wide bandgap technologies has recently been given further impetus by the development of high quality single crystal CVD diamond material [1].To realise the significant potential of diamond devices over existing device technology depends on completing a number of key objectives, in particular providing:(a). access in volume to high quality, ultra-high purity, single crystal material,(b). the capability to provide carriers by doping the material in a controlled manner,(c). the ability to process thin layers and structures.Providing access to bulk single crystal diamond (albeit not electronic grade material) has already been largely achieved and plates are commercially available for cutting applications [2]. Routes to providing suitable charge carriers are being widely investigated. Although intrinsic diamond can have exceptional electronic properties [1], in reports of both p-type and n-type diamond [3,4] the dopants are very deep (0.37 eV and 0.6 eV for boron and phosphorous respectively), which limits the realisation of conventional electronic devices operating at ambient temperatures.A series of novel devices undergone preliminary experimental evaluation. Devices made up of boron and intrinsic layers, where the boron concentration exceeds the limit of metallic conduction (>1×1020 cm−3), offer carrier diffusion at room temperature from the highly doped regions with low mobility, into adjacent regions of intrinsic material with high carrier mobility [5]. To provide the required device performance, the interface between the doped and intrinsic layers needs to be defect free and to change doping levels by several orders of magnitude in a few atomic layers.Although progress over the last few years has been rapid, there remain substantial technical challenges ahead for the realisation of large scale diamond active electronics. This paper will identify and review progress against these key issues.

Growth of large single-crystal diamond layers: analysis of the junctions between adjacent diamonds

1998 ◽  
Vol 7 (7) ◽  
pp. 986-998 ◽  
Author(s):  
C. Findeling-Dufour ◽  
A. Gicquel ◽  
R. Chiron
Keyword(s):  
Single Crystal ◽  
Large Single Crystal ◽  
Single Crystal Diamond
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