Conducting boron-doped single-crystal diamond films for high pressure research

2011 ◽  
Vol 31 (3) ◽  
pp. 388-398 ◽  
Author(s):  
Gopi K. Samudrala ◽  
Georgiy Tsoi ◽  
Andrei V. Stanishevsky ◽  
Jeffrey M. Montgomery ◽  
Yogesh K. Vohra ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Diamond Films ◽  
Boron Doped ◽  
Single Crystal Diamond

Dopant Uniformity and Concentration in Boron Doped Single Crystal Diamond Films

2012 ◽  
Vol 1395 ◽  
Author(s):  
Shannon. N. Demlow ◽  
I. Berkun ◽  
M. Becker ◽  
T. Hogan ◽  
T.A. Grotjohn
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Growth Parameters ◽  
Diamond Films ◽  
Boron Doped Diamond ◽  
High Quality ◽  
Boron Doped ◽  
Single Crystal Diamond ◽  
Wide Range ◽  
Boron Level

ABSTRACTHigh quality single crystal boron-doped diamond films are deposited in a microwave plasma-assisted CVD reactor with feedgas mixtures including hydrogen, methane, diborane, and carbon dioxide at reactor pressures of 160 Torr. The effect of diborane levels and other growth parameters on the incorporated boron levels are investigated, and the doping efficiency is calculated over a wide range of boron concentrations. The boron level is investigated using infrared absorption, and compared to SIMS measurements, and defects are shown to affect the doping uniformity.

scholarly journals Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD

2021 ◽  
Vol 1 (1) ◽  
pp. 143-149
Author(s):  
Wei Cao ◽  
Deng Gao ◽  
Hongyang Zhao ◽  
Zhibin Ma
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Lateral Growth ◽  
Single Crystal Diamond

MESFETs on H-terminated Single Crystal Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Paolo Calvani ◽  
Maria Cristina Rossi ◽  
Gennaro Conte ◽  
Stefano Carta ◽  
Ennio Giovine ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Single Crystal ◽  
Oscillation Frequency ◽  
Diamond Films ◽  
Drain Current ◽  
Gate Length ◽  
Maximum Oscillation Frequency ◽  
Single Crystal Diamond ◽  
Device Geometry ◽  
Rf Performance

AbstractEpitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.

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