Crystalline carbon nitride film synthesized by ion beam assisted magnetron sputtering and thermal annealing in nitrogen gas

2015 ◽  
Vol 55 ◽  
pp. 102-107 ◽  
Author(s):  
D.G. Liu ◽  
W.Q. Bai ◽  
Y.J. Pan ◽  
J.P. Tu
Keyword(s):  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Nitride Film ◽  
Nitrogen Gas ◽  
Carbon Nitride Film

The use of a biomolecular target for crystalline carbon nitride film deposition by Ar ion-beam sputtering without any other source of nitrogen

1998 ◽  
Vol 72 (26) ◽  
pp. 3449-3451 ◽  
Author(s):  
L. C. Chen ◽  
T. R. Lu ◽  
C. T. Kuo ◽  
D. M. Bhusari ◽  
J. J. Wu ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Film Deposition ◽  
Nitride Film ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Carbon Nitride Film

Effect of target materials on crystalline carbon nitride film preparation by ion beam sputtering

1999 ◽  
Vol 8 (8-9) ◽  
pp. 1724-1729 ◽  
Author(s):  
C.T. Kuo ◽  
L.C. Chen ◽  
K.H. Chen ◽  
T.M. Chen ◽  
T.R. Lu
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Nitride Film ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Carbon Nitride Film ◽  
Film Preparation

Structural Analysis of a Carbon Nitride Film Prepared by Ion-Beam-Assisted Deposition

1999 ◽  
Vol 38 (Part 2, No. 4A) ◽  
pp. L395-L397 ◽  
Author(s):  
Toshiyuki Hayashi ◽  
Akihito Matsumuro ◽  
Mutsuo Muramatsu ◽  
Masao Kohzaki ◽  
Yutaka Takahashi ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Nitride Film ◽  
Ion Beam Assisted Deposition ◽  
Carbon Nitride Film

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

scholarly journals CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials

Sensors ◽  
2008 ◽  
Vol 8 (4) ◽  
pp. 2662-2672 ◽  
Author(s):  
Sung Lee ◽  
Ji Lee ◽  
Shaestagir Chowdhury
Keyword(s):  
Carbon Nitride ◽  
Humidity Sensor ◽  
Sensor System ◽  
Nitride Film ◽  
Carbon Nitride Film
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