22 A beam production of the uniform negative ions in the JT-60 negative ion source

2015 ◽  
Vol 96-97 ◽  
pp. 616-619 ◽  
Author(s):  
Masafumi Yoshida ◽  
Masaya Hanada ◽  
Atsushi Kojima ◽  
Mieko Kashiwagi ◽  
Larry R. Grisham ◽  
...  
Keyword(s):  
Negative Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Beam Production

scholarly journals A Study on the negative ion beam production in the ININ sputtering ion source

2019 ◽  
Vol 65 (3) ◽  
pp. 278
Author(s):  
C. A. Valerio Lizarraga ◽  
C. Duarte-Galvan ◽  
I. Leon-Monzon ◽  
P. Villaseñor ◽  
And J. Aspiazu
Keyword(s):  
Space Charge ◽  
Particle Tracking ◽  
Linear Accelerator ◽  
Ion Beam ◽  
Negative Ions ◽  
Ion Source ◽  
Beam Dynamics ◽  
Negative Ion ◽  
Beam Generation ◽  
Beam Production

To improve the beam brightness produced by a Source of Negative Ions by Cesium Sputtering we studied the beam generation in the 12~MeV Vandergraff linear accelerator at Instituto Nacional de Investigaciones Nucleares. Results of 3D particle tracking simulations of the ion source and beamline have been compared with measurements, with better agreement than traditional codes that only take into account the negative beam, and they determine a suppression in the Cs$^{+}$ production due to space charge, which in turn explains the intensity limits for negative beam production in both ionizers, and the best way to overpass them. Also, the beam dynamics variation due to the erosion of the target inside the cathode has been determined, helping to prevent beam losses and enhance the beam brightness.

Negative-Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Junzo Ishikawa
Keyword(s):  
Ion Implantation ◽  
Negative Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Rf Plasma ◽  
Ion Currents ◽  
Promising Technique ◽  
Surface Charging ◽  
Silicon Carbon ◽  
A Charge

AbstractNegative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.

Negative Ionen durch Elektronenstoß aus organischen Nitroverbindungen, Äthylnitrit und Äthylnitrat

1967 ◽  
Vol 22 (5) ◽  
pp. 700-704
Author(s):  
K. Jäger ◽  
A. Henglein
Keyword(s):  
Electron Impact ◽  
Negative Ions ◽  
Molecular Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Electron Affinities ◽  
Low Intensity ◽  
Ion Molecule Reactions ◽  
Fragment Ions ◽  
Product Ions

Negative ion formation by electron impact has been studied in nitromethane, nitroethane, nitrobenzene, tetranitromethane, ethylnitrite and ethylnitrate. Appearance potentials, ionization efficiency curves and kinetic energies of negative ions were measured by using a Fox ion source. The electron affinities of C2H5O and of C (NO2)3 are discussed as well as the energetics of processes which yield NO2-. The electron capture in nitrobenzene and tetranitromethane leads to molecular ions [C6H5NO2~ in high, C (NO2)4 in very low intensity] besides many fragment ions. A number of product ions from negative ion-molecule reactions has also been found.

scholarly journals RF and Microwave Ion Sources Study at Institute of Modern Physics

Plasma ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 332-344
Author(s):  
Qian Y. Jin ◽  
Yu G. Liu ◽  
Yang Zhou ◽  
Qi Wu ◽  
Yao J. Zhai ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Ion Beam ◽  
Ion Beams ◽  
Ion Source ◽  
Negative Ion ◽  
Power Coupling ◽  
Beam Production ◽  
Planar Coil ◽  
Coil Antenna ◽  
Ridged Waveguide

Intense ion beam production is of high importance for various versatile applications from accelerator injectors to secondary ion mass spectrometry (SIMS). For these purposes, different types of ion beams are needed and, accordingly, the optimum plasma to produce the desired ion beams. RF-type plasma features a simple structure, high plasma density and low plasma temperature, which is essential for negative ion beam production. A very compact RF-type ion source using a planar coil antenna has been developed at IMP for negative molecular oxygen ion beam production. In terms of high-intensity positive ion beam production, 2.45 GHz microwave power-excited plasma has been widely used. At IMP, we developed a 2.45 GHz plasma source with both ridged waveguide and coaxial antenna coupling schemes, tested successfully with intense beam production. Thanks to the plasma built with an external planar coil antenna, high O2− production efficiency has been achieved, i.e., up to 43%. With 2.45 GHz microwave plasma, the ridged waveguide can support a higher power coupling of high efficiency that leads to the production of intense hydrogen beams up to 90 emA, whereas the coaxial antenna is less efficient in power coupling to plasma but can lead to attractive ion source compactness, with a reasonable beam extraction of several emA.

scholarly journals Recent Studies of Hydrogen Negative Ion Source and Beam Production for NBI in Large Helical Device

2016 ◽  
Vol 11 (0) ◽  
pp. 2505038-2505038 ◽  
Author(s):  
Katsunori IKEDA ◽  
Shaofei GENG ◽  
Katsuyoshi TSUMORI ◽  
Haruhisa NAKANO ◽  
Masashi KISAKI ◽  
...  
Keyword(s):  
Ion Source ◽  
Negative Ion ◽  
Beam Production

Negative Ionen durch Elektronenstoß an einigen organischen Schwefelverbindungen

1966 ◽  
Vol 21 (8) ◽  
pp. 1251-1259 ◽  
Author(s):  
K. Jäger ◽  
A. Henglein
Keyword(s):  
Electron Impact ◽  
Electron Capture ◽  
Chemical Reactions ◽  
Hydrogen Sulphide ◽  
Negative Ions ◽  
Ion Source ◽  
Ionization Efficiency ◽  
Dissociative Electron Capture ◽  
Negative Ion ◽  
Electron Affinities

Negative ion formation by electron impact has been studied in hydrogen sulphide, methylmercaptan, phenylmercaptan, benzylmercaptan, allylmercaptan, dimethylthioether, dimethyldisulphide and diallyldisulpbide. Appearance potentials, ionization efficiency curves and the kinetic energies of negative ions were measured by using a Fox ion source. The energies of various dissociative electron capture processses are discussed and electron affinities of some radicals of the types RS and RS2 are derived. Two chemical reactions of the CH2S- ion with dimethyldisulphide have been detected.

Positive secondary-ion mass spectrometric study of silicon nitride films on Si and GaAs with a cesium ion source

1985 ◽  
Vol 63 (6) ◽  
pp. 842-845 ◽  
Author(s):  
W. M. Lau ◽  
W. Vandervorst
Keyword(s):  
Chemical Vapor ◽  
Negative Ions ◽  
Mass Spectrometric Study ◽  
Ion Source ◽  
Negative Ion ◽  
Film Properties ◽  
Silicon Nitride Films ◽  
Secondary Ions ◽  
Chemical Vapor Deposited ◽  
Secondary Ion

The detection of positive secondary ions, as opposed to the conventional negative-ion detection, in conjunction with the use of a cesium primary-ion source was studied with a Cameca IMS-3F ion microscope. One advantage of this technique is that, unlike the detection of negative ions, charging of an insulating surface can be avoided. Plasma-enhanced chemical-vapor-deposited silicon nitrides on Si and GaAs were used as examples to demonstrate the usefulness of the technique. The distributions of species such as H, C, O, F, Al, Si, SiN, Ga, and As were measured. The correlation between these impurities and the film properties and the importance of monitoring their distribution are discussed in order to illustrate the applicability of the technique.

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