Modeling of hydrogen permeation behavior through tungsten deposition layer growing on nickel substrate by hydrogen plasma sputtering

2021 ◽  
Vol 172 ◽  
pp. 112851
Author(s):  
Yuki Hara ◽  
Kazunari Katayama ◽  
Makoto Oya
Keyword(s):  
Hydrogen Permeation ◽  
Hydrogen Plasma ◽  
Nickel Substrate ◽  
Plasma Sputtering

Properties of Binary Si:H Materials Prepared by Hydrogen Plasma Sputtering

1989 ◽  
Vol 164 ◽  
Author(s):  
Shoji Furukawa ◽  
Tatsuro Miyasato
Keyword(s):  
Substrate Temperature ◽  
Room Temperature ◽  
Hydrogen Plasma ◽  
Rf Sputtering ◽  
Hydrogen Atmosphere ◽  
Pure Hydrogen ◽  
Rf Power ◽  
Optical Gap ◽  
Plasma Sputtering ◽  
X Ray Scattering

AbstractBinary Si:H materials are prepared by means of the rf sputtering technique in pure hydrogen atmosphere on low temperature (about 100 K) and room temperature substrates. The physical properties of the obtained materials are very much affected by the rf power and substrate temperature during the deposition. The material prepared at a low substrate temperature with a low rf power has a wide optical gap, and shows a visible photoluminescence at room temperature. On the other hand, the material prepared at room temperature with a high rf power contains many Si microcrystals, whose diameters are relatively large, and its optical gap becomes very small. The latter condition causes the dependence of the crystalline direction of the material film on the substrate crystal even at the room temperature. An rf power-modulated multi-layered structure (superlattice) is also proposed, and an apparent diffraction peak can be observed in the low-angle X-ray scattering measurement.

Hydrogen gas driven permeation through tungsten deposition layer formed by hydrogen plasma sputtering

2015 ◽  
Vol 98-99 ◽  
pp. 1341-1344 ◽  
Author(s):  
Keiichiro Uehara ◽  
Kazunari Katayama ◽  
Hiroyuki Date ◽  
Satoshi Fukada
Keyword(s):  
Hydrogen Plasma ◽  
Hydrogen Gas ◽  
Plasma Sputtering

Growth Mechanism of ZnS:Mn Films Obtained by Hydrogen Plasma Sputtering and Its Application to a Thin-Film Electroluminescent Device

1993 ◽  
Vol 32 (Part 1, No. 4) ◽  
pp. 1681-1690 ◽  
Author(s):  
Hiroshi Sakama ◽  
Masanori Ohmura ◽  
Masayoshi Tonouchi ◽  
Tatsuro Miyasato
Keyword(s):  
Thin Film ◽  
Growth Mechanism ◽  
Hydrogen Plasma ◽  
Electroluminescent Device ◽  
Plasma Sputtering

Growth control and properties of microcrystallized silicon films deposited by hydrogen plasma sputtering

1997 ◽  
Vol 296 (1-2) ◽  
pp. 15-18 ◽  
Author(s):  
A. Achiq ◽  
R. Rizk ◽  
R. Madelon ◽  
F. Gourbilleau ◽  
P. Voivenel
Keyword(s):  
Hydrogen Plasma ◽  
Growth Control ◽  
Silicon Films ◽  
Plasma Sputtering
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