Identifying an unknown heat source term in the third-order pseudo-parabolic equation from nonlocal integral observation

Author(s):  
M.J. Huntul
2014 ◽  
Vol 2014 ◽  
pp. 1-20 ◽  
Author(s):  
Hiroyuki Asada ◽  
Yousuke Ogino ◽  
Kanako Yasue ◽  
Keisuke Sawada

A third order accurate cellwise relaxation implicit Discontinuous Galerkin (DG) scheme for RANS simulations using unstructured hybrid meshes is presented. A scalar parabolic equation is first examined to clarify what is really important in construction of implicit matrix to keep its diagonal dominance for the third and fourth order cellwise relaxation implicit DG schemes. In addition, discussions are given to approximated construction of implicit matrix for reducing computational cost. Then, the third order accurate cellwise relaxation implicit DG scheme for RANS simulations is successfully developed utilizing the expertise learned in the study of solving the parabolic equation. Superior spatial accuracy of the third order accurate cellwise relaxation implicit DG scheme for RANS simulations, while retaining reasonable convergence properties, is demonstrated for typical aerospace applications.


2012 ◽  
Vol 22 (06) ◽  
pp. 1250004 ◽  
Author(s):  
P. LAFITTE ◽  
C. MASCIA

We analyze numerically a forward–backward diffusion equation with a cubic-like diffusion function — emerging in the framework of phase transitions modeling — and its "entropy" formulation determined by considering it as the singular limit of a third-order pseudo-parabolic equation. Precisely, we propose schemes for both the second- and the third-order equations, we discuss the analytical properties of their semi-discrete counterparts and we compare the numerical results in the case of initial data of Riemann type, showing strengths and flaws of the two approaches, the main emphasis being given to the propagation of transition interfaces.


Author(s):  
Zhifeng Shao

A small electron probe has many applications in many fields and in the case of the STEM, the probe size essentially determines the ultimate resolution. However, there are many difficulties in obtaining a very small probe.Spherical aberration is one of them and all existing probe forming systems have non-zero spherical aberration. The ultimate probe radius is given byδ = 0.43Csl/4ƛ3/4where ƛ is the electron wave length and it is apparent that δ decreases only slowly with decreasing Cs. Scherzer pointed out that the third order aberration coefficient always has the same sign regardless of the field distribution, provided only that the fields have cylindrical symmetry, are independent of time and no space charge is present. To overcome this problem, he proposed a corrector consisting of octupoles and quadrupoles.


1973 ◽  
Vol 16 (2) ◽  
pp. 201-212 ◽  
Author(s):  
Elizabeth Carrow ◽  
Michael Mauldin

As a general index of language development, the recall of first through fourth order approximations to English was examined in four, five, six, and seven year olds and adults. Data suggested that recall improved with age, and increases in approximation to English were accompanied by increases in recall for six and seven year olds and adults. Recall improved for four and five year olds through the third order but declined at the fourth. The latter finding was attributed to deficits in semantic structures and memory processes in four and five year olds. The former finding was interpreted as an index of the development of general linguistic processes.


Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3194
Author(s):  
Adrian Petris ◽  
Petronela Gheorghe ◽  
Tudor Braniste ◽  
Ion Tiginyanu

The ultrafast third-order optical nonlinearity of c-plane GaN crystal, excited by ultrashort (fs) high-repetition-rate laser pulses at 1550 nm, wavelength important for optical communications, is investigated for the first time by optical third-harmonic generation in non-phase-matching conditions. As the thermo-optic effect that can arise in the sample by cumulative thermal effects induced by high-repetition-rate laser pulses cannot be responsible for the third-harmonic generation, the ultrafast nonlinear optical effect of solely electronic origin is the only one involved in this process. The third-order nonlinear optical susceptibility of GaN crystal responsible for the third-harmonic generation process, an important indicative parameter for the potential use of this material in ultrafast photonic functionalities, is determined.


2014 ◽  
Vol 58 (1) ◽  
pp. 183-197 ◽  
Author(s):  
John R. Graef ◽  
Johnny Henderson ◽  
Rodrica Luca ◽  
Yu Tian

AbstractFor the third-order differential equationy′″ = ƒ(t, y, y′, y″), where, questions involving ‘uniqueness implies uniqueness’, ‘uniqueness implies existence’ and ‘optimal length subintervals of (a, b) on which solutions are unique’ are studied for a class of two-point boundary-value problems.


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