Analytical and numerical parameter extraction for compact modeling of thermoelectric coolers

2013 ◽  
Vol 60 ◽  
pp. 689-699 ◽  
Author(s):  
Min Chen ◽  
G. Jeffrey Snyder
Keyword(s):  
Parameter Extraction ◽  
Compact Modeling ◽  
Numerical Parameter ◽  
Thermoelectric Coolers

scholarly journals Thyristor Compact Modeling based on Gummel-Poon Model Including Parameter Extraction Procedure

2013 ◽  
Vol 61 (16) ◽  
pp. 12-20 ◽  
Author(s):  
Ahmed Shaker ◽  
Gihan T. Sayah ◽  
Mohamed Abouelatta ◽  
Abdelhalim Zekry
Keyword(s):  
Extraction Procedure ◽  
Parameter Extraction ◽  
Compact Modeling

scholarly journals Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

2012 ◽  
Vol 2012 ◽  
pp. 1-11 ◽  
Author(s):  
Danqiong Hou ◽  
Griff L. Bilbro ◽  
Robert J. Trew
Keyword(s):  
Parameter Extraction ◽  
New Physics ◽  
Operating Conditions ◽  
Compact Modeling ◽  
Large Signal ◽  
New Model ◽  
Industry Standard ◽  
Rf Performance ◽  
Microwave Power Amplifier ◽  
Good Agreement

We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators. The new model is programmed in Verilog-A, an industry-standard compact modeling language. The new model permits the dc, small-signal, and large-signal RF performance for the transistor to be determined as a function of the device geometric structure and design features, material composition parameters, and dc and RF operating conditions. The new physics-based HFET model does not require extensive parameter extraction to determine model element values, as commonly employed for traditional equivalent-circuit-based transistor models. The new model has been calibrated and verified. We report very good agreement between simulated and measured dc and RF performance of an experimental C-band microwave power amplifier.

scholarly journals Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes

Mathematics ◽  
2021 ◽  
Vol 9 (17) ◽  
pp. 2159
Author(s):  
María José Ibáñez ◽  
Domingo Barrera ◽  
David Maldonado ◽  
Rafael Yáñez ◽  
Juan Bautista Roldán
Keyword(s):  
Hafnium Oxide ◽  
Series Resistance ◽  
Numerical Procedure ◽  
Parameter Extraction ◽  
Compact Modeling ◽  
Mathematical Technique ◽  
Electrical Device ◽  
Essential Parameter ◽  
Device Operation

An advanced new methodology is presented to improve parameter extraction in resistive memories. The series resistance and some other parameters in resistive memories are obtained, making use of a two-stage algorithm, where the second one is based on quasi-interpolation on non-uniform partitions. The use of this latter advanced mathematical technique provides a numerically robust procedure, and in this manuscript, we focus on it. The series resistance, an essential parameter to characterize the circuit operation of resistive memories, is extracted from experimental curves measured in devices based on hafnium oxide as their dielectric layer. The experimental curves are highly non-linear, due to the underlying physics controlling the device operation, so that a stable numerical procedure is needed. The results also allow promising expectations in the massive extraction of new parameters that can help in the characterization of the electrical device behavior.

scholarly journals Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs

2020 ◽  
Vol 8 ◽  
pp. 407-412
Author(s):  
Wondwosen E. Muhea ◽  
Gerard U. Castillo ◽  
Harold C. Ordonez ◽  
Thomas Gneiting ◽  
Gerard Ghibaudo ◽  
...  
Keyword(s):  
Parameter Extraction ◽  
Compact Modeling

Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K

2020 ◽  
Vol 67 (12) ◽  
pp. 5685-5692
Author(s):  
Harold Cortes-Ordonez ◽  
C. Haddad ◽  
Xavier Mescot ◽  
Krunoslav Romanjek ◽  
Gerard Ghibaudo ◽  
...  
Keyword(s):  
Parameter Extraction ◽  
Compact Modeling
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