Flower-like ZnO nanosheets grown on O2 plasma treated monolayer graphene and its photocatalytic property

Optik ◽  
2021 ◽  
pp. 168476
Author(s):  
Jitao Li ◽  
Qiuxiang Zhu ◽  
Guixia Zhang ◽  
Jiajia Han ◽  
Jinyang Ding ◽  
...  
2012 ◽  
Vol 518-523 ◽  
pp. 740-745 ◽  
Author(s):  
Zhan Ying Zhang ◽  
Yan Wei Li ◽  
Guang Sun ◽  
Feng Xiao Qi ◽  
Nai Teng Wu ◽  
...  

ZnO hierarchical microstructures with uniform flower-like morphology were successfully prepared on a large scale through a carboxymethylcellulose sodium (CMC)-assisted hydrothermal route. X-ray powder diffraction (XRD) measurement confirmed the formation of wurtzite-structured ZnO phase. Field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) analysis indicated that the as-prepared ZnO sample was composed of numerous three dimensional flower-like microstructures, each of which was assembled by nanosheets with the thickness of about 40 nm. High-resolution transmission electron microscopy (HRTEM) measurement revealed the good crystallinity nature of the ZnO nanosheets in the flower-like microstructures. The formation mechanism and photocatalytic property of the as-prepared flower-like ZnO hierarchical microstructures were studied.


Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1833
Author(s):  
Jong Chan Yoon ◽  
Zonghoon Lee ◽  
Gyeong Hee Ryu

ZnO, which can exist in various dimensions such as bulk, thin films, nanorods, and quantum dots, has interesting physical properties depending on its dimensional structures. When a typical bulk wurtzite ZnO structure is thinned to an atomic level, it is converted into a hexagonal ZnO layer such as layered graphene. In this study, we report the atomic arrangement and structural merging behavior of graphene-like ZnO nanosheets transferred onto a monolayer graphene using aberration-corrected TEM. In the region to which an electron beam is continuously irradiated, it is confirmed that there is a directional tendency, which is that small-patched ZnO flakes are not only merging but also forming atomic migration of Zn and O atoms. This study suggests atomic alignments and rearrangements of the graphene-like ZnO, which are not considered in the wurtzite ZnO structure. In addition, this study also presents a new perspective on the atomic behavior when a bulk crystal structure, which is not an original layered structure, is converted into an atomic-thick layered two-dimensional structure.


2014 ◽  
Vol 29 (8) ◽  
pp. 807
Author(s):  
WANG Min ◽  
NIU Chao ◽  
DONG Zhan-Jun ◽  
CHE Yin-Sheng ◽  
DONG Duo ◽  
...  

2013 ◽  
Vol 28 (3) ◽  
pp. 295-300 ◽  
Author(s):  
Tie-Ping CAO ◽  
Yue-Jun LI ◽  
Chang-Hua WANG

2013 ◽  
Vol 28 (8) ◽  
pp. 875-879
Author(s):  
Wen-Kui LIU ◽  
Wei-Chang ZHOU ◽  
Qing-Lin ZHANG ◽  
An-Lian PAN ◽  
Xiu-Juan ZHUANG ◽  
...  

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.


2021 ◽  
Vol 103 (8) ◽  
Author(s):  
Cenk Yanik ◽  
Vahid Sazgari ◽  
Abdulkadir Canatar ◽  
Yaser Vaheb ◽  
İsmet İ. Kaya

Sign in / Sign up

Export Citation Format

Share Document