Sharp stability results in LTNE rotating anisotropic porous layer

2018 ◽  
Vol 134 ◽  
pp. 661-664 ◽  
Author(s):  
F. Capone ◽  
M. Gentile
1999 ◽  
Vol 9 (4) ◽  
pp. 671-681 ◽  
Author(s):  
Stefan Müller ◽  
Vladimir Šverák ◽  
Baisheng Yan

Volume 1 ◽  
2004 ◽  
Author(s):  
S. Govender

The linear stability theory is used to investigate analytically the effects of vibration on convection in a homogenous porous layer heated from below. The gravitational field consists of a constant part and a sinusoidally varying part, which is tantamount to a vertically oscillating porous layer subjected to constant gravity. The linear stability results are presented for the specific case of low amplitude vibration for which it is shown that increasing the frequency of vibration stabilizes the convection.


2002 ◽  
Vol 715 ◽  
Author(s):  
Zhi-Feng Huang ◽  
Rashmi C. Desai

AbstractThe morphological and compositional instabilities in the heteroepitaxial strained alloy films have attracted intense interest from both experimentalists and theorists. To understand the mechanisms and properties for the generation of instabilities, we have developed a nonequilibrium, continuum model for the dislocation-free and coherent film systems. The early evolution processes of surface pro.les for both growing and postdeposition (non-growing) thin alloy films are studied through a linear stability analysis. We consider the coupling between top surface of the film and the underlying bulk, as well as the combination and interplay of different elastic effects. These e.ects are caused by filmsubstrate lattice misfit, composition dependence of film lattice constant (compositional stress), and composition dependence of both Young's and shear elastic moduli. The interplay of these factors as well as the growth temperature and deposition rate leads to rich and complicated stability results. For both the growing.lm and non-growing alloy free surface, we determine the stability conditions and diagrams for the system. These show the joint stability or instability for film morphology and compositional pro.les, as well as the asymmetry between tensile and compressive layers. The kinetic critical thickness for the onset of instability during.lm growth is also calculated, and its scaling behavior with respect to misfit strain and deposition rate determined. Our results have implications for real alloy growth systems such as SiGe and InGaAs, which agree with qualitative trends seen in recent experimental observations.


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