Site-Specific Low Angle Plasma FIB Milling for Cross-Sectional Electrical Characterization

2019 ◽  
Author(s):  
Chuan Zhang ◽  
Jane Y. Li ◽  
John Aguada ◽  
Howard Marks
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Electrical Characteristic ◽  
Preparation Method ◽  
Ion Beam ◽  
Grazing Angle ◽  
Electrical Characterization ◽  
Sample Preparation Method ◽  
Cross Sectional ◽  
Site Specific

Abstract This paper introduces a novel sample preparation method using plasma focused ion-beam (pFIB) milling at low grazing angle. Efficient and high precision preparation of site-specific cross-sectional samples with minimal alternation of device parameters can be achieved with this method. It offers the capability of acquiring a range of electrical characteristic signals from specific sites on the cross-section of devices, including imaging of junctions, Fins in the FinFETs and electrical probing of interconnect metal traces.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

Alternative FIB TEM Sample Preparation Method for Cross-Sections of Thin Metal Films Deposited on Polymer Substrates

2013 ◽  
Vol 19 (4) ◽  
pp. 1080-1091 ◽  
Author(s):  
Felipe Rivera ◽  
Robert Davis ◽  
Richard Vanfleet
Keyword(s):  
Sample Preparation ◽  
Cross Sections ◽  
Elemental Analysis ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Polymer Substrates ◽  
Interface Layers

AbstractTransmission electron microscopy (TEM) and focused ion beam (FIB) are proven tools to produce site-specific samples in which to study devices from initial processing to causes for failure, as well as investigating the quality, defects, interface layers, etc. However, the use of polymer substrates presents new challenges, in the preparation of suitable site-specific TEM samples, which include sample warping, heating, charging, and melting. In addition to current options that address some of these problems such as cryo FIB, we add an alternative method and FIB sample geometry that address these challenges and produce viable samples suitable for TEM elemental analysis. The key feature to this approach is a larger than usual lift-out block into which small viewing windows are thinned. Significant largely unthinned regions of the block are left between and at the base of the thinned windows. These large unthinned regions supply structural support and thermal reservoirs during the thinning process. As proof-of-concept of this sample preparation method, we also present TEM elemental analysis of various thin metallic films deposited on patterned polycarbonate, lacquer, and poly-di-methyl-siloxane substrates where the pattern (from low- to high-aspect ratio) is preserved.

A Preparation Method of Diamond Specimens Using an Advanced FIB Microscopy for Micro and Nanoanalysis

2012 ◽  
Vol 531-532 ◽  
pp. 592-595
Author(s):  
Yi Qing Chen ◽  
Feng Zai Tang ◽  
Liang Chi Zhang
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Polycrystalline Diamond ◽  
Specimen Preparation ◽  
Atomic Lattice ◽  
Cross Sectional ◽  
Site Specific ◽  
Dual Beam

This paper reports the specimen preparation using an advanced dual beam focused ion beam (FIB) technique for bulk polycrystalline diamond (PCD) composites after dynamic friction polishing (DFP). The technique adapted allows for precisely processing diamond materials at the specific polishing track sites of PCD surface, from which large cross-sectional specimens for SEM/EDS/Raman microanalysis could be successfully created. In addition, an in-situ lift-out method was developed to prepare the site-specific HRTEM specimens which were thin enough for imaging the atomic lattice of diamond and for conducting EELS analysis.

In-Situ TEM Electrical Characterization of Void Formation and Growth Along Cu Interconnect Via: FIB Based Sample Preparation Method

2020 ◽  
Author(s):  
Hagit Barda ◽  
Irina Geppert ◽  
Avraham Raz ◽  
Rémy Berthier
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Void Formation ◽  
Electrical Characterization ◽  
In Situ Tem ◽  
Sample Preparation Method ◽  
Transition Electron Microscopy

Abstract An experimental setup is presented, that allows in-situ Transition Electron Microscopy (TEM) investigation of void formation and growth within fully embedded interconnect structure, as a response to an external bias. A special TEM holder is employed to perform in-situ I-V measurements across the Via, simultaneously monitoring the morphological and chemical changes surrounding the void. This work presents in detail a Focused Ion Beam (FIB) based sample preparation method that allows the analysis of a Cu single Via structure found in the advanced microelectronic 14nm FinFET technology, as well as preliminary TEM observations.

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

A Method for Site Specific Characterization Using a Dedicated FIB System Combined With an Analyitical TEM

1999 ◽  
Vol 5 (S2) ◽  
pp. 914-915
Author(s):  
T. Kamino ◽  
T. Yaguchi ◽  
H. Matsumoto ◽  
H. Kobayashi ◽  
H. Koike
Keyword(s):  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
System Stability ◽  
Specimen Preparation ◽  
Thin Specimen ◽  
Cross Sectional ◽  
Site Specific ◽  
Specimen Holder ◽  
High Resolution Tem

A method for site specific characterization of the materials using a dedicated focused ion beam(FIB) system and an analytical transmission electron microscope (TEM) was developed. Needless to say, in TEM specimen preparation using FIB system, stability of a specimen is quite important. The specimen stage employed in the developed FIB system is the one designed for high resolution TEM, and the specimen drift rate of the stage is less than lnm/min. In addition, FIB-TEM compatible specimen holder which allows milling of a specimen with the FIB system and observation of the specimen with the TEM without re-loading was developed. To obtain thin specimen from the area to be characterized correctly, confirmation of the area before final milling is needed. However, observation of cross sectional view in a FIB system is recommended because it causes damage by Ga ion irradiation. To solve this problem, we used a STEM unit as a viewer of FIB milled specimen.

Focused Ion Beam Milling and Micromanipulation Lift-Out for Site Specific Cross-Section Tem Specimen Preparation

1997 ◽  
Vol 480 ◽  
Author(s):  
L. A. Giannuzzi ◽  
J. L. Drown ◽  
S. R. Brown ◽  
R. B. Irwin ◽  
F. A. Stevie
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specific Area ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Site Specific ◽  
Area Of Interest ◽  
Carbon Coated ◽  
A Site

AbstractA site specific technique for cross-section transmission electron microscopy specimen preparation of difficult materials is presented. Focused ion beams are used to slice an electron transparent sliver of the specimen from a specific area of interest. Micromanipulation lift-out procedures are then used to transport the electron transparent specimen to a carbon coated copper grid for subsequent TEM analysis. The experimental procedures are described in detail and an example of the lift-out technique is presented.

scholarly journals Using a Focused Ion Beam (FIB) System to Extract TEM-Ready Samples from Complex Metallic and Ceramic Structures

1999 ◽  
Vol 7 (2) ◽  
pp. 12-15 ◽  
Author(s):  
Lucille A. Giannuzzi ◽  
Richard Young ◽  
Pete Carleson
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Magnetic Media ◽  
Tem Analysis ◽  
Micro Fabrication ◽  
Site Specific ◽  
Transmission Electron ◽  
Two Sides

AbstractDriven by the analytical needs of microelectronics, magnetic media and micro-fabrication industries, focused ion beam (FIB) systems are now capable of milling and manipulating samples for the analysis of microstructure features having dimensions of 180 nm or less, A technique for locating and extracting site specific specimens for examination by transmission electron microscopy (TEM) has been developed. An identified feature can be located and precisely milled with an FIB system from two sides to prepare an ultrathin sample, and then extracted from the region with a glass rod micromanipulator onto a grid for TEM analysis. This specimen preparation method has been applied to semiconductor failure analysis and to the study of metallic and ceramic microsiructures with irregular topographies and complex mufti-layered components.

FIB Sample Preparation of Polymer Thin Films on Hard Substrates Using the Shadow-FIB Method

2009 ◽  
Vol 17 (6) ◽  
pp. 20-23 ◽  
Author(s):  
Suhan Kim ◽  
Gao Liu ◽  
Andrew M. Minor
Keyword(s):  
Thin Film ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Sacrificial Layer ◽  
Ion Beam ◽  
Initial Sample ◽  
Cross Sectional ◽  
Site Specific ◽  
Transmission Electron ◽  
Hard Substrates

Focused ion beam (FIB) instrumentation has proven to be extremely useful for preparing cross-sectional samples for transmission electron microscopy (TEM) investigations. The two most widely used methods involve milling a trench on either side of an electron-transparent window: the “H-bar” and the “lift-out” methods [1]. Although these two methods are very powerful in their versatility and ability to make site-specific TEM samples, they rely on using a sacrificial layer to protect the surface of the sample as well as the removal of a relatively large amount of material, depending on the size of the initial sample. In this article we describe a technique for making thin film cross-sections with the FIB, known as Shadow FIBing, that does not require the use of a sacrificial layer or long milling times [2].

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