Synchrotron X-ray diffraction and X-ray photoelectron spectroscopy studies of NaAlH4 containing Ti–Zr hydride additives

2009 ◽  
Vol 486 (1-2) ◽  
pp. 436-441 ◽  
Author(s):  
Chubin Wan ◽  
Xin Ju ◽  
Ying Qi ◽  
Shumao Wang ◽  
Xiaopeng Liu ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Spectroscopy Studies

scholarly journals Термодинамические свойства оксипентафторида ванадия (IV), (NH-=SUB=-4-=/SUB=-)-=SUB=-3-=/SUB=-VOF-=SUB=-5-=/SUB=-

2020 ◽  
Vol 62 (7) ◽  
pp. 1123
Author(s):  
Е.В. Богданов ◽  
Е.И. Погорельцев ◽  
А.В. Карташев ◽  
М.В. Горев ◽  
М.С. Молокеев ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
Dielectric Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Limits Of Stability ◽  
Three Phase ◽  
Temperature Dependences ◽  
Spectroscopy Studies

Abstract The (NH_4)_3VOF_5 crystals have been synthesized and their homogeneity and single-phase structure has been established by the X-ray diffraction, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy studies. The investigations of the temperature dependences of specific heat, entropy, strain, and pressure susceptibility show the occurrence of three phase transitions caused by the structural transformations in the (NH_4)_3VOF_5 crystals. The T – p phase diagram shows the temperature limits of stability of the crystalline phases implemented in (NH_4)_3VOF_5. The optical and dielectric studies disclose the ferroelastic nature of the phase transitions. An analysis of the experimental data together with the data on the isostructural (NH_4)_3VO_2F_4 crystal makes it possible to distinguish the physical properties of oxyfluorides containing vanadium of different valences (IV and V).

Effect of noble metals on selective detection of liquid petroleum gas by SnO2

1998 ◽  
Vol 13 (7) ◽  
pp. 1780-1785 ◽  
Author(s):  
A. R. Phani ◽  
M. Pelino
Keyword(s):  
Photoelectron Spectroscopy ◽  
Noble Metals ◽  
Electrical Response ◽  
Chemical Species ◽  
Gaseous Mixture ◽  
High Sensitivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Liquid Petroleum Gas ◽  
Spectroscopy Studies

The present investigation deals with the electrical response of doped SnO2 to improve the selectivity for liquid petroleum gas (LPG) in the presence of CO and CH4, by utilizing noble metal sensitizers such as Pd, Pt, and Rh. SnO2 with the addition of Pd (1.5 wt. %) or Pt (1.5 wt. %) sintered at 800 °C which have shown high sensitivity toward LPG with no cross interference of CO and CH4 at an operating temperature of 350 °C. The results suggest the possibility of utilizing the sensor for the detection of this hydrocarbon gaseous mixture. X-ray diffraction studies have been carried out to evaluate the crystallite size as a function of sintering temperature; x-ray photoelectron spectroscopy studies have been carried out to define the possible chemical species involved in the gas-solid interaction and the sensitivity enhancing mechanism of the SnO2/Pd sensor element toward LPG.

Glancing-angle X-ray diffraction and X-ray photoelectron spectroscopy studies of nitrogen-implanted tantalum

1989 ◽  
Vol 115 ◽  
pp. 73-77 ◽  
Author(s):  
P.M Raole ◽  
A.M Narsale ◽  
D.C Kothari ◽  
P.S Pawar ◽  
S.V Gogawale ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glancing Angle ◽  
Spectroscopy Studies

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

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