Properties of Czochralski grown Ce,Gd:Y3Al5O12 single crystal for white light-emitting diode

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Won-Kook Choi

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The red light emitting diode (LED) was fabricated by using europium complexes with InGaN LED (395 nm) and shown digital images, corresponding CIE color coordinates (red region) as well as obtained highest quantum yield of the thin film (78.7%).


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