Microstructure, optical and electrical properties of gallium-doped ZnO films prepared by sol–gel method

We synthesized ZnO nanocrystal colloids adopting sol-gel method using zinc acetate dehydrate as precursor, and prepared ZnO films on glass substrates by a spin-coating technique. The effect of annealing temperature on the structure, optical and electrical properties has been studied. The crystallinity and morphologies were improved by the annealing. All film samples show high transmittance of above 80% in the wavelength ranging from 400nm to 1000nm. A minimum resistivity of 5.5x10-3 cm was obtained for the film annealed at 500oC. The crystallinity, oxygen vacancies, and nanocrystalline boundaries seems likely to be crucial factors for these properties

Download Full-text

OPTICAL AND ELECTRICAL PROPERTIES OF ZINC OXIDE THIN FILMS DIP-COATED OF SOL–GEL METHOD

Surface Review and Letters ◽

10.1142/s0218625x05007700 ◽

2005 ◽

Vol 12 (05n06) ◽

pp. 697-701 ◽

Cited By ~ 2

Author(s):

M. RUSOP ◽

K. UMA ◽

T. SOGA ◽

T. JIMBO

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Annealing Temperature ◽

Sol Gel ◽

Film Deposition ◽

Zno Films ◽

Optical And Electrical Properties ◽

Gel Method ◽

Sol Gel Method ◽

Higher Temperature

The transparent c-axis oriented ZnO thin films have been prepared by sol–gel method using zinc acetate as cations source, 2-mrthoxiethanol as solvent and monoethanolamine as sol stabilizer. Film deposition was performed by dip coating technique at a withdrawal rate of 10 mm/min on quartz and silicon substrates. The effect of annealing temperature in air ambient from 100 to 800°C on the structural, optical and electrical properties of the films is discussed. ZnO films annealed with higher temperature showed an extremely sharp (002) peak in the XRD patterns, indicates increased crystallization. The optical transmittance spectra of the films is found to change with annealing temperature and showed a very good transmittance (between 80 to 90%) with the films prepared at 600°C showed highest optical transparency within the visible wavelength region. The absorption edge analysis revealed that the optical band gap is found to increase with annealing temperature up to 3.5 eV at 600°C and decreased with higher temperature. Electronic transition was found to be direct transition type. The minimum electrical resistivity of 55 Ω-cm was obtained for the films annealed at 600°C.

Download Full-text

Enhancing Optical and Electrical Properties of La- and Al-Codoped ZnO Thin Films Prepared by Sol-Gel Method -La Codoping Effect

Recent Patents on Nanotechnology ◽

10.2174/1872210510666160929115302 ◽

2017 ◽

Vol 11 (2) ◽

Author(s):

Hai -Yan He

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Sol Gel ◽

Zno Thin Films ◽

Optical And Electrical Properties ◽

Gel Method ◽

Sol Gel Method

Download Full-text

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.652-654.519 ◽

2013 ◽

Vol 652-654 ◽

pp. 519-522

Author(s):

Jun Chen ◽

Yue Hui Hu ◽

Hong Hao Hu ◽

Yi Chuan Chen

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Sol Gel ◽

Hexagonal Structure ◽

Optical And Electrical Properties ◽

Axis Orientation ◽

Gel Method ◽

Sol Gel Method ◽

Sn Doping ◽

Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

Download Full-text