Unipolar Resistive Switching Characteristics of a $ \hbox{ZrO}_{2}$ Memory Device With Oxygen Ion Conductor Buffer Layer

2012 ◽  
Vol 33 (6) ◽  
pp. 803-805 ◽  
Author(s):  
Dai-Ying Lee ◽  
Tseung-Yuen Tseng
Keyword(s):  
Buffer Layer ◽  
Resistive Switching ◽  
Memory Device ◽  
Ion Conductor ◽  
Oxygen Ion ◽  
Oxygen Ion Conductor ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Evidence for the dynamic relaxation behavior of oxygen vacancies in Aurivillius Bi2MoO6 from dielectric spectroscopy during resistance switching

2019 ◽  
Vol 7 (29) ◽  
pp. 8915-8922 ◽  
Author(s):  
Fei Guo ◽  
Mengting Zhao ◽  
Kang Xu ◽  
Yu Huan ◽  
Shuaipeng Ge ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Dielectric Spectroscopy ◽  
Oxygen Vacancies ◽  
Relaxation Behavior ◽  
Switching Behavior ◽  
Dynamic Relaxation ◽  
Resistive Switching Behavior ◽  
Ion Conductor ◽  
Oxygen Ion ◽  
Oxygen Ion Conductor

The resistive switching behavior of oxygen ion conductor Bi2MoO6 were investigated by dielectric spectroscopy.

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