On annealing induced effect in optical properties of amorphous GeSeSn chalcogenide films for optoelectronic applications

2017 ◽  
Vol 710 ◽  
pp. 431-435 ◽  
Author(s):  
A.A.A. Darwish ◽  
H.A.M. Ali
Nanoscale ◽  
2022 ◽  
Author(s):  
Meiyan Ye ◽  
Yan Li ◽  
Ruilian Tang ◽  
Siyu Liu ◽  
Shuailing Ma ◽  
...  

Wurtzite CuInS2 exhibits great potential for optoelectronic applications because of its excellent optical properties and good stability. However, exploring effective strategy to simultaneously optimaze its optical and photoelectrical properties remains...


Author(s):  
Agata Karolina Tołłoczko ◽  
Szymon J. Zelewski ◽  
Michał Błaszczak ◽  
Tomasz Woźniak ◽  
Anna Siudzińska ◽  
...  

Group-IV monochalcogenides, such as germanium selenide (GeSe) are strongly anisotropic semiconducting van der Waals crystals isoelectronic to black phosphorus, with superior stability in air conditions. High optical absorption, good conductivity,...


2006 ◽  
Vol 258 (1) ◽  
pp. 72-77 ◽  
Author(s):  
Qiming Liu ◽  
Bing Lu ◽  
Xiujian Zhao ◽  
Fuxi Gan ◽  
Jun Mi ◽  
...  

Author(s):  
Zhongyuan Guan ◽  
Haihang Ye ◽  
Peiwen Lv ◽  
Lijin Wang ◽  
Jing Zhang ◽  
...  

Multinary Cu-based chalcogenide nanocrystals (NCs) are excellent candidates for optoelectronic applications, but their growth mechanism and its impacts on the NCs’ optical properties remain controversial. Herein, we employed a simple...


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