Towards high performance near-infrared photo detectors based on SnS nanowires

Compared with bulk structures, semiconductor nanowires exhibit a higher surface-to-volume ratio, as well as unique electrical and optical properties. Due to its narrow band gap, tin (ii) sulfide (SnS) nano wire is a promising candidate for constructing near-infrared (NIR) photodetectors. Uniformly distributed and well aligned SnS nanowires were grown on mica substrate by chemical vapor deposition, and NIR photodetectors with Au (Au-device) and Al (Al-device) as the electrode were fabricated and characterized. Compared to Au-device, Al-device achieved higher photodetectivity due to reduced dark current. More importantly by incorporating photosensitive lead phthalocyanine (PbPc) film into Al-device, both responsivity and detectivity could be apparently improved, especially at weak light intensities. Under a weak light intensity of 0.79 mW/cm2 the photoresponsivity and specific detectivity were improved from ~0.56 A/W and 5.1×1010 Jones to 0.96 A/W and 8.4×1010 Jones, respectively.

Formation and physical properties of the self-assembled BFO–CFO vertically aligned nanocomposite on a CFO-buffered two-dimensional flexible mica substrate

BiFeO3–CoFe2O4 vertically aligned nanocomposites, which mainly discovered in thin-films deposited on rigid substrates, have been successfully transformed into a flexible thin-film using a mica substrate.