Improved thermal stability of Sb materials by SiO2 doping for ultra-fast phase change memory application

2017 ◽  
Vol 727 ◽  
pp. 986-990 ◽  
Author(s):  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Hua Zou ◽  
Haipeng You ◽  
Dahua Shen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
Phase Change Memory ◽  
Fast Phase ◽  
Thermal Stability Of ◽  
Change Memory

Improved thermal stability of N-doped Sb materials for high-speed phase change memory application

2016 ◽  
Vol 108 (22) ◽  
pp. 223103 ◽  
Author(s):  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Hua Zou ◽  
Jianhao Zhang ◽  
Li Yuan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Thermal Stability Of ◽  
Change Memory

Improved thermal stability and fast phase change speed of Y-doped Sb7Se3 thin film for phase change memory applications

2020 ◽  
Vol 532 ◽  
pp. 147370
Author(s):  
Ruirui Liu ◽  
Anya Hu ◽  
Zihan Zhao ◽  
Haitao Zhou ◽  
Jiwei Zhai ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Phase Change ◽  
Phase Change Memory ◽  
Fast Phase ◽  
Memory Applications ◽  
Change Memory

Improvement of thermal stability of antimony film by cerium addition for phase change memory application

2018 ◽  
Vol 29 (19) ◽  
pp. 17003-17007
Author(s):  
Jianhao Zhang ◽  
Hua Zou ◽  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Yuemei Sun ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
Phase Change Memory ◽  
Antimony Film ◽  
Thermal Stability Of ◽  
Change Memory

scholarly journals Samarium doped Sn15Sb85: a promising material for phase change memory applications

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 56000-56005 ◽  
Author(s):  
Hua Zou ◽  
Liangjun Zhai ◽  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Haipeng You ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
Phase Change Memory ◽  
Promising Material ◽  
Memory Applications ◽  
Thermal Stability Of ◽  
Change Memory

Thermal stability of phase change films is key for phase change memory applications. Sm doped Sn15Sb85 thin films were prepared by magnetron sputtering. Compared with none doped films, the thermal stability of the film was significantly improved.

The Effect of Ti-Rich TiN Film on Thermal Stability of Ge2Sb2Te5for Phase Change Memory

2016 ◽  
Vol 5 (5) ◽  
pp. P245-P249 ◽  
Author(s):  
Dan Gao ◽  
Bo Liu ◽  
Zhen Xu ◽  
Zhichao Li ◽  
Yangyang Xia ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
Phase Change Memory ◽  
Tin Film ◽  
Thermal Stability Of ◽  
Change Memory

Amorphous thermal stability of Al-doped Sb2Te3 films for phase-change memory application

2013 ◽  
Vol 103 (18) ◽  
pp. 181908 ◽  
Author(s):  
Fenfen Wei ◽  
Long Wang ◽  
Tao Kong ◽  
Lin Shi ◽  
Rong Huang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
Phase Change Memory ◽  
Thermal Stability Of ◽  
Change Memory

scholarly journals Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Nishant Saxena ◽  
Christoph Persch ◽  
Matthias Wuttig ◽  
Anbarasu Manivannan
Keyword(s):  
Thermal Stability ◽  
Electric Field ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Threshold Switching ◽  
Experimental Findings ◽  
Thermal Stability Of ◽  
Change Memory

AbstractPhase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability and fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. We report here, a unique property-portfolio of high thermal stability and picosecond threshold switching characteristics in In3SbTe2 (IST) PCM devices. Our experimental findings reveal an improved thermal stability of amorphous IST compared to most other phase change materials. Furthermore, voltage dependent threshold switching and current-voltage characteristics corroborate an extremely fast, yet low electric field threshold switching operation within an exceptionally small delay time of less than 50 picoseconds. The combination of low electric field and high speed switching with improved thermal stability of IST makes the material attractive for next-generation high-speed, non-volatile memory applications.

Stabilizing amorphous Sb by adding alien seeds for durable memory materials

2019 ◽  
Vol 21 (8) ◽  
pp. 4494-4500 ◽  
Author(s):  
Meng Xu ◽  
Bowen Li ◽  
Kailang Xu ◽  
Hao Tong ◽  
Xiaomin Cheng ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
Phase Change Memory ◽  
Thermal Stability Of ◽  
Change Memory

We developed a doping strategy to improve the thermal stability of phase-change memory by adding alien tetrahedral seeds.

O-doped Sb materials for improved thermal stability and high-speed phase change memory application

2017 ◽  
Vol 696 ◽  
pp. 150-154 ◽  
Author(s):  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Hua Zou ◽  
Long Zheng ◽  
Sannian Song ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Change Memory
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