Improved thermal stability and fast phase change speed of Y-doped Sb7Se3 thin film for phase change memory applications

2020 ◽  
Vol 532 ◽  
pp. 147370
Author(s):  
Ruirui Liu ◽  
Anya Hu ◽  
Zihan Zhao ◽  
Haitao Zhou ◽  
Jiwei Zhai ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Phase Change ◽  
Phase Change Memory ◽  
Fast Phase ◽  
Memory Applications ◽  
Change Memory

scholarly journals Samarium doped Sn15Sb85: a promising material for phase change memory applications

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 56000-56005 ◽  
Author(s):  
Hua Zou ◽  
Liangjun Zhai ◽  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Haipeng You ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
Phase Change Memory ◽  
Promising Material ◽  
Memory Applications ◽  
Thermal Stability Of ◽  
Change Memory

Thermal stability of phase change films is key for phase change memory applications. Sm doped Sn15Sb85 thin films were prepared by magnetron sputtering. Compared with none doped films, the thermal stability of the film was significantly improved.

The optimization effect of titanium on the phase change properties of SnSb4 thin films for phase change memory applications

CrystEngComm ◽  
2020 ◽  
Vol 22 (30) ◽  
pp. 5002-5009
Author(s):  
Zihan Zhao ◽  
Sicong Hua ◽  
Xiao Su ◽  
Bo Shen ◽  
Sannian Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications ◽  
Change Memory

Titanium-doped SnSb4 phase-change thin film has been experimentally investigated for phase-change random access memory (PCRAM) use.

MoSbTe for high-speed and high-thermal-stability phase-change memory applications

2018 ◽  
Vol 11 (4) ◽  
pp. 041401 ◽  
Author(s):  
Wanliang Liu ◽  
Liangcai Wu ◽  
Tao Li ◽  
Zhitang Song ◽  
Jianjun Shi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
High Thermal Stability ◽  
Memory Applications ◽  
Change Memory

Improved thermal stability of Sb materials by SiO2 doping for ultra-fast phase change memory application

2017 ◽  
Vol 727 ◽  
pp. 986-990 ◽  
Author(s):  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Hua Zou ◽  
Haipeng You ◽  
Dahua Shen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
Phase Change Memory ◽  
Fast Phase ◽  
Thermal Stability Of ◽  
Change Memory

Superlattice-like GeTe/Sb thin film for ultra-high speed phase change memory applications

2017 ◽  
Vol 457 ◽  
pp. 141-144 ◽  
Author(s):  
Yifeng Hu ◽  
Haipeng You ◽  
Xiaoqin Zhu ◽  
Hua Zou ◽  
Jianhao Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Ultra High Speed ◽  
Memory Applications ◽  
Change Memory

scholarly journals Scalability of Phase Change Materials in Nanostructure Template

2015 ◽  
Vol 2015 ◽  
pp. 1-4
Author(s):  
Wei Zhang ◽  
Biyun L. Jackson ◽  
Ke Sun ◽  
Jae Young Lee ◽  
Shyh-Jer Huang ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Scaling Limit ◽  
Phase Change Memory ◽  
Leakage Power ◽  
Memory Element ◽  
Transmission Electron ◽  
Diffraction Mode ◽  
Memory Applications ◽  
Change Memory

The scalability of In2Se3, one of the phase change materials, is investigated. By depositing the material onto a nanopatterned substrate, individual In2Se3nanoclusters are confined in the nanosize pits with well-defined shape and dimension permitting the systematic study of the ultimate scaling limit of its use as a phase change memory element. In2Se3of progressively smaller volume is heated inside a transmission electron microscope operating in diffraction mode. The volume at which the amorphous-crystalline transition can no longer be observed is taken as the ultimate scaling limit, which is approximately 5 nm3for In2Se3. The physics for the existence of scaling limit is discussed. Using phase change memory elements in memory hierarchy is believed to reduce its energy consumption because they consume zero leakage power in memory cells. Therefore, the phase change memory applications are of great importance in terms of energy saving.

Sign in / Sign up

Export Citation Format

Share Document