Dependence of Al incorporation on growth temperature during laser molecular beam epitaxy of AlxGa1−xN epitaxial layers on sapphire (0001)

2018 ◽  
Vol 739 ◽  
pp. 122-128 ◽  
Author(s):  
Prashant Tyagi ◽  
Ch Ramesh ◽  
S.S. Kushvaha ◽  
Monu Mishra ◽  
Govind Gupta ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Laser Molecular Beam Epitaxy

scholarly journals Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy

2000 ◽  
Vol 76 (24) ◽  
pp. 3549-3551 ◽  
Author(s):  
T. Makino ◽  
C. H. Chia ◽  
N. T. Tuan ◽  
Y. Segawa ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Laser Molecular Beam Epitaxy ◽  
Lattice Matched

scholarly journals HgTe and CdTe epitaxial layers and HgTe–CdTe superlattices grown by laser molecular beam epitaxy

1986 ◽  
Vol 4 (4) ◽  
pp. 2086-2090 ◽  
Author(s):  
J. T. Cheung ◽  
G. Niizawa ◽  
J. Moyle ◽  
N. P. Ong ◽  
B. M. Paine ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Laser Molecular Beam Epitaxy

Laser molecular beam epitaxy of vertically self-assembled GaN nanorods on Ta metal foil: role of growth temperature and laser repetition rate

CrystEngComm ◽  
2019 ◽  
Vol 21 (36) ◽  
pp. 5448-5454 ◽  
Author(s):  
Prashant Tyagi ◽  
Ch. Ramesh ◽  
B. S. Yadav ◽  
S. S. Kushvaha ◽  
M. Senthil Kumar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Repetition Rate ◽  
Molecular Beam ◽  
Metal Foil ◽  
Laser Repetition Rate ◽  
Laser Molecular Beam Epitaxy ◽  
Flexible Devices ◽  
Self Assembled

Self-aligned GaN nanorod assembly directly grown on metal foil substrates is very attractive for developing flexible devices.

scholarly journals InP and InGaAs grown on InP substrate by molecular beam epitaxy

2022 ◽  
Vol 355 ◽  
pp. 03047
Author(s):  
Hailong Yu ◽  
Hanchao Gao ◽  
Wei Wang ◽  
Ben Ma ◽  
Zhijun Yin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Growth Temperature ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Strongly Correlated ◽  
Inp Substrate ◽  
Inp Substrates

InP and InGaAs epitaxial layers on InP substrates using molecular beam epitaxy (MBE) have been studied. Carrier concentration and mobility of InP and InGaAs are found that are strongly correlated with the growth temperature and V/III ratio. The InGaAs layers using As2 were compared with the layers grown using As4 from a Riber standard cracker cell. When As4 is used, the highest electron mobility of InGaAs is 3960 cm2/(V·s) with the V/III ratio of 65. When converted to As2, the V/III ratio with the highest electron mobility decreased to 20. With the arsenic cracker temperature decreased from 950 ℃ to 830 ℃, the electron mobility increased from 4090 cm2/(V • s) to 5060 cm2/(V • s).

Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire

2017 ◽  
Vol 66 ◽  
pp. 142-148 ◽  
Author(s):  
Ripudaman Dixit ◽  
Prashant Tyagi ◽  
Sunil Singh Kushvaha ◽  
Sreekumar Chockalingam ◽  
Brajesh Singh Yadav ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Laser Molecular Beam Epitaxy
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