Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter

We fabricated amorphous oxide semiconductor thin-film transistors (TFTs) using Ge-doped InZnO (Ge–IZO) thin films as active-channel layers. The Ge–IZO thin films were deposited at room temperature by radio-frequency (RF) magnetron co-sputtering system, and then annealed in air for 1 h at 300 °C. Some processing parameters such as sputtering oxygen partial pressure [O2/(Ar + O2)] and sputtering power for GeO2 target were changed to investigate what was the optimal amount of Ge in the Ge–IZO active layer. A small concentration of Ge added to IZO by co-sputtering enhanced the carrier concentration, mobility, and conductivity; but further increase in Ge concentration degraded the device performance. In order to optimize the electrical properties of Ge–IZO TFTs, we tried to adjust the processing parameters and the best Ge–IZO TFT was obtained at a co-sputtering oxygen partial pressure of 2% and GeO2 target power of 10 W. The fabricated Ge–IZO TFT exhibited an on/off ratio of 3.0×107, a saturation mobility of 13.05 cm2/V · s, a subthreshold swing of 0.95 V/dec, and a threshold voltage of 0 V. XPS and XRD analyses of Ge–IZO films were performed to investigate the binding energies of atoms in Ge–IZO films and the crystallinity of the films. 90% transmittance of visible light was achieved, which makes the technology useful for transparent devices.

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Arterial-Alveolar Oxygen Partial Pressure Ratio

Critical Care Medicine ◽

10.1097/00003246-198705000-00022 ◽

1987 ◽

Vol 15 (5) ◽

pp. 540 ◽

Cited By ~ 2

Author(s):

Robert Gilbert

Keyword(s):

Oxygen Partial Pressure ◽

Partial Pressure ◽

Pressure Ratio ◽

Alveolar Oxygen ◽

Partial Pressure Ratio

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Growth Properties of Sputtered ZnO Thin Films Affected by Oxygen Partial Pressure Ratio

Applied Science and Convergence Technology ◽

10.5757/jkvs.2008.17.3.204 ◽

2008 ◽

Vol 17 (3) ◽

pp. 204-210 ◽

Cited By ~ 2

Author(s):

Man-Il Kang ◽

Moon-Won Kim ◽

Yong-Gi Kim ◽

Ji-Wook Ryu ◽

Han-O Jang

Keyword(s):

Thin Films ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Pressure Ratio ◽

Zno Thin Films ◽

Growth Properties ◽

Partial Pressure Ratio

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Evaluation of gas sensing characteristics of the hydrogen/oxygen partial pressure ratio sensor.

The Proceedings of Mechanical Engineering Congress Japan ◽

10.1299/jsmemecj.2020.j01106 ◽

2020 ◽

Vol 2020 (0) ◽

pp. J01106

Author(s):

Kengo SUZUKI ◽

Yusuke MARU ◽

Hiroshi MIYAZAKI ◽

Yasunari YUZURIHA

Keyword(s):

Oxygen Partial Pressure ◽

Partial Pressure ◽

Gas Sensing ◽

Pressure Ratio ◽

Sensing Characteristics ◽

Partial Pressure Ratio

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Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor

Chinese Journal of Liquid Crystals and Displays ◽

10.3788/yjyxs20163106.0558 ◽

2016 ◽

Vol 31 (6) ◽

pp. 558-562

Author(s):

孙建明 SUN Jian-ming ◽

周婷婷 ZHOU Ting-ting ◽

任庆荣 REN Qing-rong ◽

胡合合 HU He-he ◽

陈宁 CHEN Ning ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

Effect Of Oxygen

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Minimizing Residual Images of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistor-Based Flexible Organic Light-Emitting Diode Displays by Controlling Oxygen Partial Pressure

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2020.18805 ◽

2020 ◽

Vol 20 (11) ◽

pp. 6916-6919

Author(s):

Do Young Won ◽

Hyun Min Kim ◽

Yun Ju Oh ◽

Manh-Cuong Nguyen ◽

Rino Choi ◽

...

Keyword(s):

Thin Film ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Light Emitting Diode ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Light Emitting ◽

Organic Light Emitting Diode

Plastic organic light emitting diode displays suffer from residual image, which is closely connected with the hysteresis of the driving thin-film transistor in the pixels. Therefore, in researching paper, we manufactured an OLED display comprise a polyimide substrate and an amorphous indium gallium zinc oxide thin film transistor active layer. Paper proposed a solution for reducing hysteresis through oxygen partial pressure control and evaluated it using hysteresis analysis. The results showed that hysteresis is strongly dependent on the threshold voltage is settled by the oxygen partial pressure while active layer deposition of the TFT. Moreover, hysteresis decreases with increasing temperature.

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Kinetic decomposition of Ni2SiO4 in oxygen potential gradients

Journal of Materials Research ◽

10.1557/jmr.1987.0338 ◽

1987 ◽

Vol 2 (3) ◽

pp. 338-344 ◽

Cited By ~ 15

Author(s):

K. T. Jacob ◽

A. K. Shukla

Keyword(s):

Oxygen Partial Pressure ◽

Partial Pressure ◽

Oxygen Potential ◽

Pressure Ratio ◽

Metallurgical Society ◽

Low Oxygen ◽

Critical Oxygen ◽

Kinetic Decomposition ◽

Potential Gradients ◽

Partial Pressure Ratio

Nickel orthosilicate (Ni2SiO4) has been found to decompose into its component binary oxides in oxygen potential gradients at 1373 K. Nickel oxide was formed at the high oxygen potential boundary, while silica was detected at the low oxygen potential side. Significant porosity and fissures were observed near the Ni2SiO4/SiO2 interface and the SiO2 layer. The critical oxygen partial pressure ratio required for decomposition varied from 1.63 to 2.15 as the oxygen pressures were altered from 1.01 ⊠ 105 to 2.7X 10−4 Pa, well above the dissociation pressure of Ni2SiO4. Platinum markers placed at the boundaries of the Ni2SiO4 sample indicated growth of NiO at the higher oxygen potential boundary, without any apparent transport of material to the low oxygen potential side. However, significant movement of the bulk Ni2SiO4 crystal with respect to the marker was not observed. The decomposition of the silicate occurs due to the unequal rates of transport of Ni and Si. The critical oxygen partial pressure ratio required for decomposition is related both to the thermodynamic stability of Ni2SiO4 with respect to component oxides and the ratio of diffusivities of nickel and silicon. Kinetic decomposition of multicomponent oxides, first discovered by Schmalzried, Laqua, and co-workers [H. Schmalzried, W. Laqua, and P. L. Lin, Z. Natur Forsch. Teil A 34, 192 (1979); H. Schmalzried and W. Laqua, Oxid. Met. 15, 339 (1981); W. Laqua and H. Schmalzried, Chemical Metallurgy—A Tribute to Carl Wagner (Metallurgical Society of the AIME, New York, 1981), p. 29] has important consequences for their use at high temperatures and in geochemistry.

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