scholarly journals Growth Properties of Sputtered ZnO Thin Films Affected by Oxygen Partial Pressure Ratio

2008 ◽  
Vol 17 (3) ◽  
pp. 204-210 ◽  
Author(s):  
Man-Il Kang ◽  
Moon-Won Kim ◽  
Yong-Gi Kim ◽  
Ji-Wook Ryu ◽  
Han-O Jang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pressure Ratio ◽  
Zno Thin Films ◽  
Growth Properties ◽  
Partial Pressure Ratio

scholarly journals Influence of oxygen partial pressure on the microstructural and magnetic properties of Er-doped ZnO thin films

AIP Advances ◽  
2015 ◽  
Vol 5 (6) ◽  
pp. 067105 ◽  
Author(s):  
Wei-Bin Chen ◽  
Xue-Chao Liu ◽  
Fei Li ◽  
Hong-Ming Chen ◽  
Ren-Wei Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Er Doped

Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 383-390 ◽  
pp. 6289-6292
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Qin Qin Wei ◽  
Yuan Bin Su ◽  
Shu Lian Yang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray ◽  
Partial Pressures

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

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