Er-doped antimonite Sb2O3−PbO−ZnO/ZnS glasses studied by low-temperature photoluminescence spectroscopy

2019 ◽  
Vol 780 ◽  
pp. 866-872 ◽  
Author(s):  
P. Kostka ◽  
Z.G. Ivanova ◽  
M. Nouadji ◽  
E. Černošková ◽  
J. Zavadil
2008 ◽  
Vol 600-603 ◽  
pp. 437-440 ◽  
Author(s):  
John W. Steeds

A common set of optical centres found in photoluminescence spectra of electron irradiated 4H SiC is interpreted as originating in neutral carbon-vacancy carbon anti-site pairs.


2015 ◽  
Vol 119 (21) ◽  
pp. 11846-11851 ◽  
Author(s):  
Giulia Tregnago ◽  
Michael Wykes ◽  
Giuseppe M. Paternò ◽  
David Beljonne ◽  
Franco Cacialli

1998 ◽  
Vol 83 (9) ◽  
pp. 4902-4908 ◽  
Author(s):  
Yasufumi Fujiwara ◽  
Anthony P. Curtis ◽  
Gregory E. Stillman ◽  
Naoteru Matsubara ◽  
Yoshikazu Takeda

2017 ◽  
Vol 192 ◽  
pp. 1104-1109 ◽  
Author(s):  
P. Kostka ◽  
I. Kabalci ◽  
T. Tay ◽  
P. Gladkov ◽  
J. Zavadil

Molecules ◽  
2016 ◽  
Vol 21 (7) ◽  
pp. 885 ◽  
Author(s):  
Khaoula Jemli ◽  
Hiba Diab ◽  
Ferdinand Lédée ◽  
Gaelle Trippé-Allard ◽  
Damien Garrot ◽  
...  

2010 ◽  
Vol 645-648 ◽  
pp. 171-174 ◽  
Author(s):  
Jean Lorenzzi ◽  
Georgios Zoulis ◽  
Olivier Kim-Hak ◽  
Nikoletta Jegenyes ◽  
Davy Carole ◽  
...  

We report the results of a systematic investigation performed to reduce the residual n-type doping level of the 3C-SiC layers grown by the VLS mechanism on 6H-SiC(0001) on-axis substrate. This new approach, termed “High purity VLS” leads to low doped and low compensated material, which was confirmed by Raman and Low Temperature Photoluminescence spectroscopy. The resultant 3C morphology remains typical of single-domain layers and the n-type doping level could be estimated around 6x1016 cm-3.


1999 ◽  
Vol 60 (19) ◽  
pp. 13335-13338 ◽  
Author(s):  
V. Emiliani ◽  
Ch. Lienau ◽  
M. Hauert ◽  
G. Colí ◽  
M. DeGiorgi ◽  
...  

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