Annealing effect and leakage current transport mechanisms of high k ternary GdAlOx gate dielectrics

2019 ◽  
Vol 791 ◽  
pp. 839-846 ◽  
Author(s):  
Shuan Li ◽  
Yanqing Wu ◽  
Hongen Yu ◽  
Kai Fu ◽  
Jie Zheng ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
Annealing Effect ◽  
Current Transport ◽  
Transport Mechanisms ◽  
High K

scholarly journals Leakage current transport mechanisms of La0.67Sr0.33MnO3/BaTiO3 bilayer films grown on Nb:SrTiO3

2015 ◽  
Vol 38 (3) ◽  
pp. 725-729 ◽  
Author(s):  
PAN RUIKUN ◽  
LIU PANKE ◽  
LI MINGKAI ◽  
TAO HAIZHENG ◽  
LI PAI ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Bilayer Films

Leakage Current Mechanisms in Epitaxial Gd[sub 2]O[sub 3] High-k Gate Dielectrics

2008 ◽  
Vol 11 (3) ◽  
pp. G12 ◽  
Author(s):  
H. D. B. Gottlob ◽  
T. J. Echtermeyer ◽  
M. Schmidt ◽  
T. Mollenhauer ◽  
T. Wahlbrink ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
High K

Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics

2005 ◽  
Author(s):  
Kenji OKADA ◽  
Hiroyuki OTA ◽  
Tsuyoshi HORIKAWA ◽  
Yasuyuki TAMURA ◽  
Takaoki SASAKI ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
Noise Analysis ◽  
Lifetime Prediction ◽  
Current Noise ◽  
High K

The Effect of Ternary Material (Zr, Y, and O) High-k Gate Dielectrics

2013 ◽  
Vol 699 ◽  
pp. 422-425 ◽  
Author(s):  
K.C. Lin ◽  
C.H. Chou ◽  
J.Y. Chen ◽  
C.J. Li ◽  
J.Y. Huang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Property ◽  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Gate Dielectrics ◽  
Bottom Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
High K

In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y2O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

2015 ◽  
Vol 55 (11) ◽  
pp. 2198-2202 ◽  
Author(s):  
K.C. Lin ◽  
P.C. Juan ◽  
C.H. Liu ◽  
M.C. Wang ◽  
C.H. Chou
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
High K ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment

2020 ◽  
Vol 109 ◽  
pp. 104933
Author(s):  
Kuei-Wen Huang ◽  
Teng-Jan Chang ◽  
Chun-Yuan Wang ◽  
Sheng-Han Yi ◽  
Chin-I. Wang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer By Layer ◽  
High K
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