Graphene quantum dots-wrapped vertically aligned zinc oxide nanorods arrays for photosensing application

2021 ◽  
Vol 853 ◽  
pp. 157025
Author(s):  
A. Kathalingam ◽  
Hafiz Muhammad Salman Ajmal ◽  
Dhanasekaran Vikraman ◽  
Sam-Dong Kim ◽  
Hyun-Chang Park ◽  
...  
2019 ◽  
Vol 10 (1) ◽  
pp. 147 ◽  
Author(s):  
Albertus Bramantyo ◽  
Kenji Murakami ◽  
Masayuki Okuya ◽  
Arief Udhiarto ◽  
Nji Raden Poespawati

Author(s):  
A. Rayerfrancis ◽  
Bhargav P. Balaji ◽  
N. Ahmed ◽  
C. Balaji

Vertically aligned zinc oxide nanorods were grown on low and high temperature deposited aluminium doped zinc oxide seed layer by hydrothermal method and annealed to improve crystallinity. The morphology of the seed layer and the grown nanorods were studied by field emission scanning electron microscopy characterization technique. The properties of the zinc oxide nanorods were analyzed using laser spectroscopic studies. Resonant Raman spectroscopy reveals the unique increase in the A1(LO) mode of vibration with increase in count. The luminescence property of the nanorods was studied with photoluminescence spectrometer. The vertically aligned zinc oxide nanorods show, the very high band edge emission in the ultraviolet region of the electromagnetic spectrum. DOI: 10.21883/FTP.2017.12.45186.8562


2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Karthik Laxman ◽  
Tanujjal Bora ◽  
Salim H. Al-Harthi ◽  
Joydeep Dutta

This paper reports on UV-mediated enhancement in the sensitization of semiconductor quantum dots (QDs) on zinc oxide (ZnO) nanorods, improving the charge transfer efficiency across the QD-ZnO interface. The improvement was primarily due to the reduction in the interfacial resistance achieved via the incorporation of UV light induced surface defects on zinc oxide nanorods. The photoinduced defects were characterized by XPS, FTIR, and water contact angle measurements, which demonstrated an increase in the surface defects (oxygen vacancies) in the ZnO crystal, leading to an increase in the active sites available for the QD attachment. As a proof of concept, a model cadmium telluride (CdTe) QD solar cell was fabricated using the defect engineered ZnO photoelectrodes, which showed ∼10% increase in photovoltage and ∼66% improvement in the photocurrent compared to the defect-free photoelectrodes. The improvement in the photocurrent was mainly attributed to the enhancement in the charge transfer efficiency across the defect rich QD-ZnO interface, which was indicated by the higher quenching of the CdTe QD photoluminescence upon sensitization.


2006 ◽  
Vol 89 (10) ◽  
pp. 103109 ◽  
Author(s):  
Adam D. Lazareck ◽  
Teng-Fang Kuo ◽  
Jimmy M. Xu ◽  
Bradford J. Taft ◽  
Shana O. Kelley ◽  
...  

2010 ◽  
Vol 518 (6) ◽  
pp. 1627-1636 ◽  
Author(s):  
R.N. Gayen ◽  
A. Rajaram ◽  
R. Bhar ◽  
A.K. Pal

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