scholarly journals Crystallization of Ge2Sb2Te5 under high hydrostatic pressures: Differences in nanoscale atomic ordering in as-deposited and pressure-induced amorphous phases

2021 ◽  
pp. 159980
Author(s):  
M. Krbal ◽  
A.V. Kolobov ◽  
M. Hanfland ◽  
P. Fons
1995 ◽  
Vol 402 ◽  
Author(s):  
H. G. Nam ◽  
Nam-Ihn Cho

AbstractTitanium silicides were prepared by coevaporation of Ti and Si on Si substrates at intermediate substrate temperatures followed by high temperature annealing. Depending on the deposition conditions, transmission electron diffraction analyses revealed two different halo patterns from the as-deposited samples. Variations in the deposition conditions included substrate temperature, deposition rate, and film thickness. Radial distribution functions were calculated to estimate the short range ordering of the amorphous phases. The interatomic distances of all the titanium silicide compounds were also calculated in order to compare them with the atomic ordering of amorphous phases. Phase transition from these amorphous phases to the first crystalline silicide is discussed in terms of kinetic variations as well as the atomic ordering.


Author(s):  
Nilanjan Roy ◽  
Sucharita Giri ◽  
Harshit ◽  
Partha P. Jana

Abstract The site preference and atomic ordering of the ternary Rh5Ga2As have been investigated using first-principles density functional theory (DFT). An interesting atomic ordering of two neighboring elements Ga and As reported in the structure of Rh5Ga2As by X-ray diffraction data only is confirmed by first-principles total-energy calculations. The previously reported experimental model with Ga/As ordering is indeed the most stable in the structure of Rh5Ga2As. The calculation detected that there is an obvious trend concerning the influence of the heteroatomic Rh–Ga/As contacts on the calculated total energy. Interestingly, the orderly distribution of As and Ga that is found in the binary GaAs (Zinc-blende structure type), retained to ternary Rh5Ga2As. The density of states (DOS) and Crystal Orbital Hamiltonian Population (COHP) are calculated to enlighten the stability and bonding characteristics in the structure of Rh5Ga2As. The bonding analysis also confirms that Rh–Ga/As short contacts are the major driving force towards the overall stability of the compound.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
You-He Zhou ◽  
Cong Liu ◽  
Lei Shen ◽  
Xingyi Zhang

AbstractThe second generation HTS wires have been used in many superconducting components of electrical engineering after they were fabricated. New challenge what we face to is how the damages occur in such wires with multi-layer structure under both mechanical and extreme environment, which also dominates their quality. In this work, a macroscale technique combined a real-time magneto-optical imaging with a cryogenic uniaxial-tensile loading system was established to investigate the damage behavior accompanied with magnetic flux evolution. Under a low speed of tensile strain, it was found that the local magnetic flux moves gradually to form intermittent multi-stack spindle penetrations, which corresponds to the cracks initiated from substrate and extend along both tape thickness and width directions, where the amorphous phases at the tip of cracks were also observed. The obtained results reveal the mechanism of damage formation and provide a potential orientation for improving mechanical quality of these wires.


1994 ◽  
Vol 14 (6) ◽  
pp. 671-679 ◽  
Author(s):  
J. Ahlqvist ◽  
A. Harilainen ◽  
K. Aalto ◽  
S. Sarna ◽  
M. Lalla ◽  
...  

2005 ◽  
Vol 220 (12/2005) ◽  
Author(s):  
Thomas Proffen ◽  
Katharine L. Page ◽  
Sylvia E. McLain ◽  
Bjørn Clausen ◽  
Timothy W. Darling ◽  
...  

2009 ◽  
Vol 102 (1) ◽  
pp. 297-303 ◽  
Author(s):  
G. Bruni ◽  
C. Milanese ◽  
V. Berbenni ◽  
F. Sartor ◽  
M. Villa ◽  
...  
Keyword(s):  

2008 ◽  
Vol 93 (23) ◽  
pp. 232503 ◽  
Author(s):  
W. Ito ◽  
M. Nagasako ◽  
R. Y. Umetsu ◽  
R. Kainuma ◽  
T. Kanomata ◽  
...  

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