A novel small bandgap donor–acceptor polymer with a very small band gap of 0.95 eV shows promising photoresponse under near infrared light in phototransistors.
Seebeck coefficient of VFe2Al over a wide range of doping levels can be explained only with a small band-gap (Eg) range of 0.02–0.04 eV. This Eg value is also consistent with high-temperature resistivity data of nominally stoichiometric VFe2Al.