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Author(s):  
James Gustafson ◽  
James Speer

Abstract The 17th century was a period of transition in world history. It was marked globally by social movements emerging in response to widespread drought, famine, disease, warfare, and dislocation linked to climate change. Historians have yet to situate Safavid Iran (1501–1722) within the “General Crisis.” This article, coauthored by an environmental historian and a climate scientist, revisits primary sources and incorporates tree-ring evidence to argue that an ecological crisis beginning in the late 17th century contributed to the collapse of the imperial ecology of the Safavid Empire. A declining resource base and demographic decline conditioned the unraveling of imperial networks and the empire's eventual fall to a small band of Afghan raiders in 1722. Ultimately, this article makes a case for the connectedness of Iran to broader global environmental trends in this period, with local circumstances and human agency shaping a period of acute environmental crisis in Iran.


2021 ◽  
Vol 923 (1) ◽  
pp. 85
Author(s):  
A. Ashok ◽  
B. Beheshtipour ◽  
M. A. Papa ◽  
P. C. C. Freire ◽  
B. Steltner ◽  
...  

Abstract We conduct searches for continuous gravitational waves from seven pulsars that have not been targeted in continuous wave searches of Advanced LIGO data before. We target emission at exactly twice the rotation frequency of the pulsars and in a small band around such a frequency. The former search assumes that the gravitational-wave quadrupole is changing in a phase-locked manner with the rotation of the pulsar. The latter search over a range of frequencies allows for differential rotation between the component emitting the radio signal and the component emitting the gravitational waves, for example the crust or magnetosphere versus the core. Timing solutions derived from the Arecibo 327 MHz Drift-Scan Pulsar Survey observations are used. No evidence of a signal is found and upper limits are set on the gravitational-wave amplitude. For one of the pulsars we probe gravitational-wave intrinsic amplitudes just a factor of 3.8 higher than the spin-down limit, assuming a canonical moment of inertia of 1038 kg m2. Our tightest ellipticity constraint is 1.5 × 10−8, which is a value well within the range of what a neutron star crust could support.


Author(s):  
Pham Thi Hong Duyen ◽  
Anh Tien Nguyen

In this work, orthoferrite NdFeO3 nanomaterials with particle sizes 20-40 nm have been successfully synthesized via a simple co-precipitation method through the hydrolysis of Nd (III) and Fe (III) cations in hot water with 5% NaOH as a precipitating agent. Single-phase NdFeO3 was generated after calcination of the as-prepared powder at 700, 800, and 900 °C for 1 hour. The UV-Vis spectra at room temperature presented strong absorption in the UV-Vis regions (l = 200–400 nm and 400–600 nm) with small band gap energy (Eg = 2.2÷2.5 eV). The obtained NdFeO3 nanomaterials exhibited a hard ferromagnetic behavior with high coercivity (Hc = 600–1600 Oe).


2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Takahiro Yamada ◽  
Naoki Matsuo ◽  
Masanori Enoki ◽  
Hisanori Yamane

Abstract A new ternary sodium magnesium bismuthide, NaMgBi, has been synthesized from the constituent metals, and its crystal structure was determined by single-crystal X-ray diffraction. NaMgBi crystallizes in a tetragonal PbFCl-type structure corresponding to the space group P4/nmm, where Z = 2, a = 4.7123(4) and c = 7.8158(7) Å. The structure is composed of layers formed by edge-sharing Bi tetrahedra centered with Mg stacked in the c-axis direction, and these layers sandwich the Na atoms. First-principles computations based on density functional theory calculations have verified that the most stable atomic configuration is the one in which the Na and Mg atoms occupy the 2a and 2c sites, respectively. The electrical resistivity measured for a sintered polycrystalline sample of NaMgBi with a relative density of 70% was found to gradually decrease from 868 to 26.4 mΩ cm upon increasing the temperature from 297 to 506 K, and the Seebeck coefficient decreased from 273 to 180 μV K−1 upon increasing the temperature from 298 to 496 K. Electronic structure calculations have revealed that NaMgBi must be a semiconductor with a small band gap of ∼0.1 eV.


Author(s):  
Okpaga D. M

Abstract: This work explains the impacts of temperature on the electronic conductivity of silicon and gallium arsenide. Illustrations of how conductivity varies at different temperatures were depicted using equations and graphs. The effective use of semiconductor materials depends on the proper fabrication of the material about its temperature dependence. Also, the analysis of the variation of electronic conductivity in both silicon and that of gallium arsenide with a small band gap is performed towards analyzing the impacts of this on silicon and gallium arsenide. Keywords: Temperature, Silicon, Gallium Arsenide, Conductivity, Variation.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Muskan Nabi ◽  
Dinesh C. Gupta

AbstractExplorations of stable lead-free perovskites have currently achieved substantial interest to overcome the instability and avoid toxicity related issue faced with the lead-based perovskites. In this study, we have comprehensively studied the stability, nature and origin of electronic, transport and optical properties of inorganic halide double perovskites, which could provide a better understanding of their possible potential applications. The density functional theory is used to investigate the different physical properties of these materials. The stability of these cubic materials is validated by optimizing the structure, tolerance factor, mechanical stability test. The materials are small band gap semiconductors with outshining optoelectronic performance. Due to high optical absorption, high conductivity and low reflectivity they have great potential to be used for optoelectronic application purpose. Because of small band gap we have also investigated the variation of various transport parameters with chemical potential. The semiconducting nature of materials results in ZT close to unity predicting its excellent application in thermoelectric technology.


2021 ◽  
Vol 591 ◽  
pp. 1-8
Author(s):  
Chia-Hao Chang ◽  
Mahesh Madasu ◽  
Min-Han Wu ◽  
Pei-Lun Hsieh ◽  
Michael H. Huang

Author(s):  
Zonghao Shen ◽  
Ji Wu ◽  
Matthew W. Shorvon ◽  
Guillaume Cazaux ◽  
Stephen C. Parker ◽  
...  
Keyword(s):  
Band Gap ◽  

2021 ◽  
Author(s):  
Muskan Nabi ◽  
Dinesh C. Gupta

Abstract Explorations of new stable lead free perovskites have currently achieved substantial interest in the field of photovoltaics and optoelectronics as it tries to overcome the instability issue and avoid toxicity related with the lead based perovskites. We herein not only comprehensively tried to explain the experimentally synthesized two inorganic halide double perovskite materials but exploring their broader structural stability and also provide us a guideline to better understand their possible potential applications. For this purpose we performed density functional theory to investigate the structural, electronic, optical, elastic and thermoelectric properties of these materials. The stability of these cubic materials is validated by optimizing the structure, from the tolerance factor, mechanical stability test. These materials are found to be small band gap semiconductors with outshining optoelectronic performance. Due to high optical absorption, high conductivity and low reflectivity they have great potential to be used as a light absorbing material for photovoltaic application. Because, of small band gap we also tried to explore the variation of various transport properties with chemical potential. The semiconducting nature of materials results in ZT close to unity predicting its excellent application in thermoelectric technology.


2021 ◽  
Vol 11 (5) ◽  
pp. 2016
Author(s):  
Pietro Dalle Feste ◽  
Matteo Crisci ◽  
Federico Barbon ◽  
Francesca Tajoli ◽  
Marco Salerno ◽  
...  

The wide interest in developing green energy technologies stimulates the scientific community to seek, for devices, new substitute material platforms with a low environmental impact, ease of production and processing and long-term stability. The synthesis of metal oxide (MO) semiconductors fulfils these requirements and efforts are addressed towards optimizing their functional properties through the improvement of charge mobility or energy level alignment. Two MOs have rising perspectives for application in light harvesting devices, mainly for the role of charge selective layers but also as light absorbers, namely MoO3 (an electron blocking layer) and Co3O4 (a small band gap semiconductor). The need to achieve better charge transport has prompted us to explore strategies for the doping of MoO3 and Co3O4 with vanadium (V) ions that, when combined with oxygen in V2O5, produce a high work function MO. We report on subcritical hydrothermal synthesis of V-doped mesostructures of MoO3 and of Co3O4, in which a tight control of the doping is exerted by tuning the relative amounts of reactants. We accomplished a full analytical characterization of these V-doped MOs that unambiguously demonstrates the incorporation of the vanadium ions in the host material, as well as the effects on the optical properties and work function. We foresee a promising future use of these materials as charge selective materials in energy devices based on multilayer structures.


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