In situ scanning tunnelling microscopy during metal-organic vapour phase epitaxy

2007 ◽  
Vol 298 ◽  
pp. 8-11 ◽  
Author(s):  
M. Pristovsek ◽  
B. Rähmer ◽  
M. Breusig ◽  
R. Kremzow ◽  
W. Richter
Keyword(s):  
Vapour Phase ◽  
Scanning Tunnelling Microscopy ◽  
Vapour Phase Epitaxy ◽  
Scanning Tunnelling ◽  
Metal Organic ◽  
Organic Vapour ◽  
Tunnelling Microscopy

SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations

2005 ◽  
Vol 892 ◽  
Author(s):  
Rachel Oliver ◽  
Menno J. Kappers ◽  
Joy Sumner ◽  
Ranjan Datta ◽  
Colin J. Humphreys
Keyword(s):  
Atomic Force Microscopy ◽  
Vapour Phase ◽  
Threading Dislocation ◽  
Vapour Phase Epitaxy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dislocation Densities ◽  
Metal Organic ◽  
Organic Vapour

AbstractFast-turnaround, accurate methods for the assessment of threading dislocation densities in GaN are an essential research tool. Here, we present an in-situ surface treatment for use in MOVPE (metal-organic vapour phase epitaxy) growth, in which GaN is exposed to a SiH4 flux at 860 °C in the presence of NH3. Subsequent characterisation by atomic force microscopy shows that the treatment is effective in increasing edge and mixed/screw dislocation pit sizes on both n- and p-type material, and on partially coalesced GaN layers.

In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy

2000 ◽  
Vol 221 (1-4) ◽  
pp. 149-155 ◽  
Author(s):  
Markus Pristovsek ◽  
Bing Han ◽  
Jörg-Thomas Zettler ◽  
Wolfgang Richter
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
In Situ Investigation ◽  
Metal Organic ◽  
Organic Vapour

Correlation of Ingap(001) Surface Structure During Growth and CuptB-Type Bulk Ordering

1999 ◽  
Vol 583 ◽  
Author(s):  
M. Zorn ◽  
P. Kurpas ◽  
A. Bhattacharya ◽  
M. Weyers ◽  
J.-T. Zettler ◽  
...  
Keyword(s):  
Surface Structure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Surface Conditions ◽  
Reflectance Anisotropy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Lattice Matched

AbstractThe mechanism causing the CuPtB-type ordering of InGaP grown lattice matched to GaAs was investigated by in-situ reflectance anisotropy spectroscopy (RAS/RDS). Experiments were performed during InGaP growth in metal-organic vapour phase epitaxy (MOVPE). From the experiments it can be concluded that bulk ordering only occurs when InGaP growth is performed under phosphorus-rich (2×1)-like surface conditions. Bulk ordering completely disappears under growth conditions which cause a less-phosphorus-rich (2×4)-like surface dimer configuration.

In situ growth of nano-structures by metal-organic vapour phase epitaxy

1997 ◽  
Vol 170 (1-4) ◽  
pp. 39-46 ◽  
Author(s):  
Werner Seifert ◽  
Niclas Carlsson ◽  
Jonas Johansson ◽  
Mats-Erik Pistol ◽  
Lars Samuelson
Keyword(s):  
Vapour Phase ◽  
In Situ Growth ◽  
Vapour Phase Epitaxy ◽  
Nano Structures ◽  
Metal Organic ◽  
Organic Vapour

ZnSe metal organic vapour-phase epitaxy on GaAs: substrate preparation as the limiting factor in ZnSe growth

1998 ◽  
Vol 184-185 ◽  
pp. 1338 ◽  
Author(s):  
D.N. Gnoth ◽  
T.L. Ng ◽  
I.B. Poole ◽  
D.A. Evans ◽  
N. Maung ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Vapour Phase ◽  
Limiting Factor ◽  
Substrate Preparation ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour
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