Origin of surface defects and influence of an in situ deposited SiN nanomask on the properties of strained AlGaN/GaN heterostructures grown on Si(111) using metal–organic vapour phase epitaxy
2000 ◽
Vol 221
(1-4)
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pp. 149-155
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1986 ◽
pp. 68-69
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1993 ◽
Vol 17
(1-3)
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pp. 21-24
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2007 ◽
Vol 298
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pp. 8-11
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2004 ◽
Vol 262
(1-4)
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pp. 78-83
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Keyword(s):
1997 ◽
Vol 170
(1-4)
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pp. 39-46
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Keyword(s):
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1998 ◽
Vol 184-185
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pp. 1338
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Keyword(s):