SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations

2005 ◽  
Vol 892 ◽  
Author(s):  
Rachel Oliver ◽  
Menno J. Kappers ◽  
Joy Sumner ◽  
Ranjan Datta ◽  
Colin J. Humphreys
Keyword(s):  
Atomic Force Microscopy ◽  
Vapour Phase ◽  
Threading Dislocation ◽  
Vapour Phase Epitaxy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dislocation Densities ◽  
Metal Organic ◽  
Organic Vapour

AbstractFast-turnaround, accurate methods for the assessment of threading dislocation densities in GaN are an essential research tool. Here, we present an in-situ surface treatment for use in MOVPE (metal-organic vapour phase epitaxy) growth, in which GaN is exposed to a SiH4 flux at 860 °C in the presence of NH3. Subsequent characterisation by atomic force microscopy shows that the treatment is effective in increasing edge and mixed/screw dislocation pit sizes on both n- and p-type material, and on partially coalesced GaN layers.

Atomic Force Microscopy of Growth Features on Epitaxial CdHgTe Films

1992 ◽  
Vol 280 ◽  
Author(s):  
M. Aindow ◽  
T. T. Cheng ◽  
I. P. Jones ◽  
M. G. Astles ◽  
D. J. Williams
Keyword(s):  
Atomic Force Microscopy ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Organic Vapour ◽  
Interdiffused Multilayer Process ◽  
Growth Features ◽  
Edge Dislocations

ABSTRACTAtomic Force Microscopy has been used to observe the details of surface morphology on CdxHg1-xTe epitaxial films. On films grown by liquid phase epitaxy (LPE), tiered pyramidal features were observed and these are consistent with enhanced nucleation and growth at emergent edge dislocations which thread through from subgrain boundaries in the substrate. On films grown by metal-organic vapour phase epitaxy (MOVPE) using the interdiffused multilayer process (IMP), terraces and steps are observed as expected but the step edges are decorated. It is suggested that this corresponds to the deposition of one binary layer in Volmer-Weber mode.

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

Single layer growth of sub-micron metal–organic framework crystals observed by in situ atomic force microscopy

2009 ◽  
pp. 6294 ◽  
Author(s):  
Neena S. John ◽  
Camilla Scherb ◽  
Maryiam Shöâeè ◽  
Michael W. Anderson ◽  
Martin P. Attfield ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Metal Organic Framework ◽  
Single Layer ◽  
Layer Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Organic Framework

In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy

2000 ◽  
Vol 221 (1-4) ◽  
pp. 149-155 ◽  
Author(s):  
Markus Pristovsek ◽  
Bing Han ◽  
Jörg-Thomas Zettler ◽  
Wolfgang Richter
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
In Situ Investigation ◽  
Metal Organic ◽  
Organic Vapour

Correlation of Ingap(001) Surface Structure During Growth and CuptB-Type Bulk Ordering

1999 ◽  
Vol 583 ◽  
Author(s):  
M. Zorn ◽  
P. Kurpas ◽  
A. Bhattacharya ◽  
M. Weyers ◽  
J.-T. Zettler ◽  
...  
Keyword(s):  
Surface Structure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Surface Conditions ◽  
Reflectance Anisotropy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Lattice Matched

AbstractThe mechanism causing the CuPtB-type ordering of InGaP grown lattice matched to GaAs was investigated by in-situ reflectance anisotropy spectroscopy (RAS/RDS). Experiments were performed during InGaP growth in metal-organic vapour phase epitaxy (MOVPE). From the experiments it can be concluded that bulk ordering only occurs when InGaP growth is performed under phosphorus-rich (2×1)-like surface conditions. Bulk ordering completely disappears under growth conditions which cause a less-phosphorus-rich (2×4)-like surface dimer configuration.

scholarly journals Crystal growth of MOF-5 using secondary building units studied by in situ atomic force microscopy

CrystEngComm ◽  
2014 ◽  
Vol 16 (42) ◽  
pp. 9834-9841 ◽  
Author(s):  
Pablo Cubillas ◽  
Kimberley Etherington ◽  
Michael W. Anderson ◽  
Martin P. Attfield
Keyword(s):  
Atomic Force Microscopy ◽  
Crystal Growth ◽  
Real Time ◽  
Metal Organic Framework ◽  
Force Microscopy ◽  
Atomic Force ◽  
Secondary Building Units ◽  
Metal Organic ◽  
Zinc Benzoate

Crystal growth of the metal–organic framework, MOF-5, using basic zinc benzoate, [Zn4O(O2CC6H5)6], was studied in real time using atomic force microscopy.

scholarly journals Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

2002 ◽  
Vol 7 ◽  
Author(s):  
E. Frayssinet ◽  
B. Beaumont ◽  
J. P. Faurie ◽  
Pierre Gibart ◽  
Zs. Makkai ◽  
...  
Keyword(s):  
Free Exciton ◽  
Vapour Phase ◽  
Nitride Layer ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocation ◽  
Time Resolved ◽  
Vapour Phase Epitaxy ◽  
Mixture Prior ◽  
Metal Organic ◽  
Organic Vapour

GaN/sapphire layers have been grown by Metal Organic Vapour Phase Epitaxy (MOVPE). An amorphous silicon nitride layer is deposited using a SiH4/NH3 mixture prior to the growth of the low temperature GaN buffer layer. Such a process induces a 3D nucleation at the early beginning of the growth, resulting in a kind of maskless ELO process with random opening sizes. This produces a significant decrease of the threading dislocation (TD) density compared to the best GaN/sapphire templates. Ultra Low Dislocation density (ULD) GaN layers were obtained with TD density as low as 7×107cm−2 as measured by atomic force microscopy (AFM), cathodoluminescence and transmission electron microscopy (TEM). Time-resolved photoluminescence experiments show that the lifetime of the A free exciton is principally limited by capture onto residual donors, similar to the situation for nearly dislocation-free homoepitaxial layers.

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